BUL65A

LAB MECHANICAL DATA Dimensions in mm 6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215) SEME BUL65A 2.18 (0.086) 2.44 (0.096) 0.84 (0.033) 0.94 (0.037) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • • • • SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING 1.09 (0.043) 1.30 (0.051) 5.97 (0.235) 6.22 (0.245) 1 2 3 0.76 (0.030) 1.14 (0.045) 0.64 (0.025) 0.89 (0.035) 8.89 (0.350) 9.78 (0.385) 2.31 (0.091) Typ. 2.31 (0.091) Typ. 0.46 (0.018) 0.61 (0.024) FEATURES • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages. 4.60 (0.181) Typ. 1.04 (0.041) 1.14 (0.045) I-PAK (TO251) Pin 1 – Base Pad 2 – Collector Pad 3 – Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc. Collector – Base Voltage(IE=0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Peak Collector Current Base Current Total Dissipation at Tcase = 25°C Operating and Storage Temperature Range Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 600V 300V 10V 7A 12A 2A 20W –55 to +150°C Prelim. 2/97 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO SEME BUL65A Test Conditions Min. 300 600 10 Typ. Max. Unit ELECTRICAL CHARACTERISTICS Collector – Emitter Sustaining Voltage IC = 10mA Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector – Base Cut–Off Current Collector – Emitter Cut–Off Current Emitter Cut–Off Current IC = 1mA IE = 1mA VCB = 600V TC = 125°C IB = 0 VEB = 9V IC = 0 IC = 0.1A IC = 1A IC = 4A IC = 1A TC = 125°C VCE = 5V VCE = 5V VCE = 1V TC = 125°C IB = 0.2A IB = 0.4A IB = 0.8A IB = 0.2A IB = 0.8A VCE = 4V f = 1MHz VCE = 290V V 10 100 100 10 100 µA µA µA 20 25 5 4 30 50 9 8 .07 0.2 0.4 0.9 1.1 20 30 0.1 0.5 0.8 1.1 1.2 V V — hFE* DC Current Gain VCE(sat)* Collector – Emitter Saturation Voltage IC = 2A IC = 4A IC = 1A IC = 4A IC = 0.2A VCB = 10V VBE(sat)* Base – Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Transition Frequency Output Capacitance ft Cob MHz pF * Pulse test tp = 300µs , δ < 2% Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 2/97