BUL72B-LCC4

LAB MECHANICAL DATA Dimensions in mm SEME BUL72B - LCC4 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR ≈ 2.16 (0.085) 1.39 (0.055) 1.02 (0.040) 1.27 (0.050) 1.07 (0.040) 9.14 (0.360) 8.64 (0.340) 12 13 14 15 16 11 7.62 (0.300) 7.12 (0.280) 17 18 1 2 0.76 (0.030) 0.51 (0.020) 10 9 8 7 6 5 4 3 1.65 (0.065) 1.40 (0.055) 0.33 (0.013) Rad. 0.08 (0.003) • • • • SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING 1.39 (0.055) 1.15 (0.045) 0.43 (0.017) 0.18 (0.007 Rad. FEATURES LCC4 TRANSISTOR BASE COLLECTOR EMITTER PINS 4,5 1,2,15,16,17,18 6,7,8,9,10,11,12,13 • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IB Ptot Rqj-c Tstg Semelab plc. Collector – Base Voltage(IE=0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Peak Collector Current Base Current Total Dissipation at Tcase = 25°C Thermal Resistance Junction to Case Operating and Storage Temperature Range Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 200V 100V 10V 8A 12A 2A 5W 25°C/W –55 to +150°C Prelim. 6/00 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO SEME BUL72B - LCC4 Test Conditions Min. 100 250 10 Typ. Max. Unit ELECTRICAL CHARACTERISTICS Collector – Emitter Sustaining Voltage IC = 10mA Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector – Base Cut–Off Current Collector – Emitter Cut–Off Current Emitter Cut–Off Current IC = 1mA IE = 1mA VCB = 250V TC = 125°C IB = 0 VEB = 9V IC = 0 IC = 0.3A IC = 3A IC = 5A IC = 1A TC = 125°C VCE = 4V VCE = 4V VCE = 4V TC = 125°C IB = 0.1A IB = 0.3A IB = 0.5A IB = 0.3A IB = 0.5A VCE = 4V f = 1MHz VCE = 100V V 10 100 100 10 100 mA mA mA 30 25 20 80 60 50 0.2 0.5 0.8 1.1 1.3 20 44 V V — hFE* DC Current Gain VCE(sat)* Collector – Emitter Saturation Voltage IC = 3A IC = 5A IC = 3A IC = 5A IC = 0.2A VCB = 10V VBE(sat)* Base – Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Transition Frequency Output Capacitance ft Cob MHz pF * Pulse test tp = 300ms , d < 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 6/00