SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP51
• • • Low VCE(SAT), Fast switching. Hermetic TO3 Metal package. Ideally suited for Motor Control, Switching and Linear Applications Screening Options Available
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ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCEX VCEO VEBO IC ICM PD TJ Tstg VBE = -1.5V Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Peak Collector Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 250V 175V 10V 80A 100A 300W 1.72W/°C -55 to +200°C -55 to +200°C
THERMAL PROPERTIES
Symbols
RθJC
Parameters
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
0.58
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8312 Issue 1 Page 1 of 3
Website: http://www.semelab-tt.com
SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP51
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols
ICEX IEBO V(BR)CEO
(1)
Parameters
Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage
Test Conditions
VCE = 250V VBE = -1.5V TC = 150°C VEB = 8V IC = 10mA IC = 20A IB = 2A IB = 4A IB = 14A IB = 2A IB = 4A IB = 14A VCE = 4V VCE = 4V VCE = 4V IC = 0
Min.
Typ
Max.
0.1 5 0.1
Units
mA
175 0.5 0.6 1.0 1.1 1.2 1.5 20 20 10 V
VCE(sat)
(1)
IC = 40A IC = 70A IC = 20A
VBE(sat)
(1)
Base-Emitter Saturation Voltage
IC = 40A IC = 70A IC = 20A
hFE
(1)
Forward-current transfer ratio
IC = 40A IC = 70A
DYNAMIC CHARACTERISTICS
ts tf Storage Time Fall Time IC = 50A IB1 = -IB2 = 10A VCC = 200V 1.0 0.3 µs
Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2%
Semelab S emel Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8312 Issue 1 Page 2 of 3
SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP51
MECHANICAL DATA
Dimensions in mm (inches)
3 9 .9 5 (1 .5 7 3 ) m ax. 3 0 .4 0 (1 .1 9 7 ) 3 0 .1 5 (1 .1 8 7 ) 1 7 .1 5 (0 .6 7 5 ) 1 6 .6 4 (0 .6 5 5 )
2 0 .3 2 (0 .8 0 0 ) 1 8 .8 0 (0 .7 4 0 ) d ia .
1 1 .1 8 (0 .4 4 0 ) 1 0 .6 7 (0 .4 2 0 )
1 .7 8 (0 .0 7 0 ) 1 .5 2 (0 .0 6 0 )
1 .5 7 (0 .0 6 2 ) 1 .4 7 (0 .0 5 8 ) d ia . 2 p lc s .
TO3 (TO-204AE)
Pin 1 - Base Pin 2 - Emitter Case - Collector
Semelab S emel Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
1 2 .0 7 (0 .4 7 5 ) 1 1 .3 0 (0 .4 4 5 )
7 .8 7 (0 .3 1 0 ) 6 .9 9 (0 .2 7 5 )
2 6 .6 7 (1 .0 5 0 ) m ax.
4 .0 9 (0 .1 6 1 ) 3 .8 4 (0 .1 5 1 ) d ia . 2 p lc s .
Website: http://www.semelab-tt.com
Document Number 8312 Issue 1 Page 3 of 3
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