BUP52_09

SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP52 • • • Low VCE(SAT), Fast switching. Hermetic TO3 Metal package. Ideally suited for Motor Control, Switching and Linear Applications Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCEX VCEO VEBO IC ICM PD TJ Tstg VBE = -1.5V Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Peak Collector Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 300V 200V 10V 70A 90A 300W 1.72W/°C -55 to +200°C -55 to +200°C THERMAL PROPERTIES Symbols RθJC Parameters Thermal Resistance, Junction To Case Min. Typ. Max. 0.58 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8313 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP52 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols ICEX IEBO V(BR)CEO (1) Parameters Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = 300V VBE = -1.5V TC = 150°C VEB = 8V IC = 10mA IC = 20A IB = 2A IB = 4A IB = 14A IB = 2A IB = 5A IB = 15A VCE = 4V VCE = 4V VCE = 4V IC = 0 Min. Typ Max. 0.1 5 0.1 Units mA 200 0.5 0.6 0.9 1.1 1.2 1.5 20 12 8 V VCE(sat) (1) IC = 40A IC = 70A IC = 20A VBE(sat) (1) Base-Emitter Saturation Voltage IC = 40A IC = 70A IC = 20A hFE (1) Forward-current transfer ratio IC = 40A IC = 70A DYNAMIC CHARACTERISTICS ts tf Storage Time Fall Time IC = 40A IB1 = -IB2 = 10A VCC = 200V 1.0 0.3 µs Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8313 Issue 1 Page 2 of 3 SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUP52 MECHANICAL DATA Dimensions in mm (inches) 3 9 .9 5 (1 .5 7 3 ) m ax. 3 0 .4 0 (1 .1 9 7 ) 3 0 .1 5 (1 .1 8 7 ) 1 7 .1 5 (0 .6 7 5 ) 1 6 .6 4 (0 .6 5 5 )  2 0 .3 2 (0 .8 0 0 ) 1 8 .8 0 (0 .7 4 0 ) d ia . 1 1 .1 8 (0 .4 4 0 ) 1 0 .6 7 (0 .4 2 0 ) 1 .7 8 (0 .0 7 0 ) 1 .5 2 (0 .0 6 0 ) 1 .5 7 (0 .0 6 2 ) 1 .4 7 (0 .0 5 8 ) d ia . 2 p lc s . TO3 (TO-204AE) Pin 1 - Base Pin 2 - Emitter Case - Collector S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com 1 2 .0 7 (0 .4 7 5 ) 1 1 .3 0 (0 .4 4 5 ) 7 .8 7 (0 .3 1 0 ) 6 .9 9 (0 .2 7 5 ) 2 6 .6 7 (1 .0 5 0 ) m ax. 4 .0 9 (0 .1 6 1 ) 3 .8 4 (0 .1 5 1 ) d ia . 2 p lc s . Website: http://www.semelab-tt.com Document Number 8313 Issue 1 Page 3 of 3