BUR50

SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUR50 • • • High Pulse Power, Fast Switching. Hermetic Metal TO3 Package. Ideally suited for Motor Control and Power Switching Circuits Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current tp = 10ms Peak Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 200V 125V 10V 70A 100A 20A 350W 2W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJC Parameters Thermal Resistance, Junction To Case Min. Typ. Max. 0.5 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 6522 Issue 2 Page 1 of 3 Website: http://www.semelab-tt.com SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUR50 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols V(BR)CEO V(BR)EBO ICEO ICBO IEBO VCE(sat) (1) (1) Parameters Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Forward-current transfer ratio Test Conditions IC = 50mA IE = 1.0mA VCE = 125V VCB = 200V IB = 0 IE = 0 TC = 125°C VEB = 7V IC = 35A IC = 70A IC = 35A IC = 70A IC = 5A IC = 50A IC = 0 IB = 2A IB = 7A IB = 2A IB = 7A VCE = 4V VCE = 4V Min. 125 10 Typ Max. Units V 1.0 0.2 2 0.2 1.0 0.8 1.5 1.8 1.6 20 15 2 140 V mA VBE(sat) (1) (1) hFE DYNAMIC CHARACTERISTICS fT Transition Frequency IC = 1.0A f = 1.0MHz Turn-On Time Storage Time Fall Time IC = 70A IB1 = 7A IC = 70A IB1 = -IB2 = 7A VCC = 60V VCC = 60V 0.5 0.82 0.1 1.2 2 0.5 µs VCE = 5V 10 16 MHz ton ts tf Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 6522 Issue 2 Page 2 of 3 SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUR50 MECHANICAL DATA Dimensions in mm (inches) 3 9 .9 5 (1 .5 7 3 ) m ax. 3 0 .4 0 (1 .1 9 7 ) 3 0 .1 5 (1 .1 8 7 ) 1 7 .1 5 (0 .6 7 5 ) 1 6 .6 4 (0 .6 5 5 )  2 0 .3 2 (0 .8 0 0 ) 1 8 .8 0 (0 .7 4 0 ) d ia . 1 1 .1 8 (0 .4 4 0 ) 1 0 .6 7 (0 .4 2 0 ) 1 .7 8 (0 .0 7 0 ) 1 .5 2 (0 .0 6 0 ) 1 .5 7 (0 .0 6 2 ) 1 .4 7 (0 .0 5 8 ) d ia . 2 p lc s . TO3 (TO-204AE) Pin 1 - Base Pin 2 - Emitter Case - Collector S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com 1 2 .0 7 (0 .4 7 5 ) 1 1 .3 0 (0 .4 4 5 ) 7 .8 7 (0 .3 1 0 ) 6 .9 9 (0 .2 7 5 ) 2 6 .6 7 (1 .0 5 0 ) m ax. 4 .0 9 (0 .1 6 1 ) 3 .8 4 (0 .1 5 1 ) d ia . 2 p lc s . Website: http://www.semelab-tt.com Document Number 6522 Issue 2 Page 3 of 3