BUR52
MECHANICAL DATA Dimensions in mm(inches)
HIGH CURRENT NPN SILICON TRANSISTOR
6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
FEATURES
• FAST SWITCHING • HIGH PULSE POWER
22.23 (0.875) max.
38.61 (1.52) 39.12 (1.54)
29.9 (1.177) 30.4 (1.197)
16.64 (0.655) 17.15 (0.675)
1
2
3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50)
1.47 (0.058) 1.60 (0.063)
APPLICATIONS
• POWER SWITCHING CIRCUITS • MOTOR CONTROL
TO3 (TO204AE) Pin 1 = Base Pin 2 = Emitter Case = Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC ICM IB Ptot Tstg, Tj RθJC Collector – Base Voltage (IE= 0V) Collector – Emitter Voltage (IB= 0V) Collector – Emitter Voltage (IC= 0V) Collector Current Peak Collector Current (tp = 10 ms) Base Current Total Power Dissipation at Tcase ≤ 25°C Storage Temperature Max. Operating Junction Temperature Junction to Case Thermal Resistance 350V 250V 10V 60A 80A 16A 350W -65°C to +200°C 200°C 0.5°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5764 Issue 3
BUR52
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
V(BR)CEO* V(BR)EBO ICEO ICBO IEBO VCE(sat)* VBE(sat)* hFE IS/b ft ton tf ts Collector - Emitter Breakdown Voltage Emitter – Base Breakdown Voltage Collector Emitter Cut-off Current Collector -Base Cut-off Current Emitter–Base Cut-off Current Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage DC Current Gain Second Breakdown Collector Current Transition Frequency Turn–On Time Fall Time Storage Time VCE = 20V IC = 1.0A f = 1MHz IC = 40A VCC = 100V IC = 40A IB2 - 4A IC = 40A IB2 - 4A IB1 =4A VCC = 100V IB1 =4A VCC = 100V IB = 4A t = 1s VCE = 5V VCE = 250V VCE = 350V IB = 0 IE = 0 TC = 125°C IC = 0 IC = 25A IC = 40A IC = 25A IC = 40A IC = 5A IC = 40A VEB = 7V IB = 2A IB = 4A IB = 2A IB = 4A VCE = 4V VCE = 4V 20 15 17.5 10 0.3 0.2 1.2 16 1.0 0.6 2 μs 1.5 0.7 IC = 0 IE = 10mA
Test Conditions
IC = 200mA IB = 0
Min.
250 10
Typ.
Max. Unit
V V 1.0 0.2 2 0.2 1.0 1.5 1.8 2 100 mA mA mA V V — A MHz
*Pulsed tp =300μs @< 1%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5764 Issue 3
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