BUV62A

BUV62A

  • 厂商:

    SEME-LAB

  • 封装:

  • 描述:

    BUV62A - FAST SWITCHING NPN POWER TRANSISTOR - Seme LAB

  • 详情介绍
  • 数据手册
  • 价格&库存
BUV62A 数据手册
FAST SWITCHING NPN POWER TRANSISTOR BUV62A • • • • • • Fast Switching Times Low Switching Losses Low Saturation Voltage Hermetic TO3 Metal package. Ideally suited for Motor Control, Switching and Linear Applications High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCEV VCEO VEBO IC ICM IB IBM PD TJ Tstg VBE = -1.5V Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Peak Collector Current Base Current Base Peak Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 400V 300V 7V 40A 60A 8A 12A 250W 1.43W/°C -55 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJC Parameters Thermal Resistance, Junction To Case Min. Typ. Max. 0.70 Units °C/W Semelab Ltd reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing an order. S emelab Semelab Ltd Telephone +44 (0) 1455 556565 Email: sales@semelab-tt.com Coventry Road, Lutterworth, Leicestershire, LE17 4JB Fax +44 (0) 1455 552612 Website: http://www.semelab-tt.com Document Number 8320 Issue 1 Page 1 of 3 FAST SWITCHING NPN POWER TRANSISTOR BUV62A ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols V(BR)CEO(1) V(BR)EBO ICEX Parameters Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Test Conditions IC = 10mA IE = 50mA VCE = 400V IB = 0 IC = 0 VBE = -1.5V Tj = 100°C VCE = 400V RBE = 10 Tj = 100°C VEB = 5V IC = 15A IC = 0 IB = 1.5A Tj = 100°C IC = 15A IB = 1.5A Tj = 100°C Min. 300 7 Typ. Max. Units V 1.0 4.0 1.0 5.0 1.0 0.9 1.9 1.3 1.3 V mA ICER IEBO VCE(sat) (1) Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VBE(sat) (1) Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% DYNAMIC CHARACTERISTICS (Inductive Load) Symbols ts tf tc Parameters Storage Time Fall Time Crossover Time Test Conditions VCC = 250V IC = 15A VBB = -5V LC = 0.83mH VCC = 50V VBB = -5V LC = 0.83mH Tj = 125°C Vclamp = 300V IB = 1.5A RB2 = 1.6 Tj = 100°C ICWoff = 22A IB1 = 1.5A RBB = 1.6 Min. Typ. 2.2 0.2 0.3 Max. Units µs VCEW Maximum Collector Emitter Voltage without Snubber 300 V S emelab Semelab Ltd Telephone +44 (0) 1455 556565 Email: sales@semelab-tt.com Coventry Road, Lutterworth, Leicestershire, LE17 4JB Fax +44 (0) 1455 552612 Website: http://www.semelab-tt.com Document Number 8320 Issue 1 Page 2 of 3 FAST SWITCHING NPN POWER TRANSISTOR BUV62A MECHANICAL DATA Dimensions in mm (inches) 3 9 .9 5 (1 .5 7 3 ) m ax. 3 0 .4 0 (1 .1 9 7 ) 3 0 .1 5 (1 .1 8 7 ) 1 7 .1 5 (0 .6 7 5 ) 1 6 .6 4 (0 .6 5 5 )  2 0 .3 2 (0 .8 0 0 ) 1 8 .8 0 (0 .7 4 0 ) d ia . 1 1 .1 8 (0 .4 4 0 ) 1 0 .6 7 (0 .4 2 0 ) 1 .7 8 (0 .0 7 0 ) 1 .5 2 (0 .0 6 0 ) 1 .5 7 (0 .0 6 2 ) 1 .4 7 (0 .0 5 8 ) d ia . 2 p lc s . TO3 (TO-204AE) Pin 1 - Base Pin 2 - Emitter Case - Collector S emelab Semelab Ltd Telephone +44 (0) 1455 556565 Email: sales@semelab-tt.com Coventry Road, Lutterworth, Leicestershire, LE17 4JB Fax +44 (0) 1455 552612 Website: http://www.semelab-tt.com 1 2 .0 7 (0 .4 7 5 ) 1 1 .3 0 (0 .4 4 5 ) 7 .8 7 (0 .3 1 0 ) 6 .9 9 (0 .2 7 5 ) 2 6 .6 7 (1 .0 5 0 ) m ax. 4 .0 9 (0 .1 6 1 ) 3 .8 4 (0 .1 5 1 ) d ia . 2 p lc s . Document Number 8320 Issue 1 Page 3 of 3
BUV62A
1. 物料型号:BUA62A,这是一个快速开关NPN功率晶体管。

2. 器件简介:BUA62A具有快速开关时间、低开关损耗和低饱和电压。它采用密封的TO3金属封装,非常适合用于电机控制、开关和线性应用。该器件还提供高可靠性筛选选项。

3. 引脚分配:TO3(TO-204AE)封装,引脚1为基极(Base),引脚2为发射极(Emitter),外壳为集电极(Collector)。

4. 参数特性: - 集电极-发射极电压(VCEO):300V - 发射极-基极电压(VEBO):7V - 连续集电极电流(IC):40A - 峰值集电极电流(ICM):60A - 基极电流(IB):8A - 基极峰值电流(IBM):12A - 总功率耗散在Tc=25°C时(PD):250W,超过25°C时的降额系数为1.43W/°C - 结温范围(TJ):-55至+200°C - 存储温度范围(Tstg):-65至+200°C

5. 功能详解:BUA62A具有低饱和电压和快速开关特性,适用于需要快速切换和低能耗的应用场合。其高可靠性和高功率耗散能力使其适合于电机控制和高功率开关应用。

6. 应用信息:BUA62A适用于电机控制、开关和线性应用。

7. 封装信息:BUA62A采用TO3(TO-204AE)封装,具有金属外壳,引脚1为基极,引脚2为发射极,外壳为集电极。
BUV62A 价格&库存

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