BUX12_09

SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX12 • • • High Current Capability. Hermetic TO3 Metal package. Ideally suited for Motor Control, Switching and Linear Applications Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEX VCEO VEBO IC ICM IB PD TJ Tstg Collector – Base Voltage VBE = -1.5V Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current tp = 10ms Peak Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 300V 300V 250V 7V 20A 25A 4A 110W 0.63W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJC Parameters Thermal Resistance, Junction To Case Min. Typ. Max. 1.59 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8172 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX12 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols ICEO ICEX IEBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) hFE (1) (1) (1) Parameters Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Forward-current transfer ratio Test Conditions VCE = 200V VCE = 300V TC = 125°C VEB = 5V IC = 10mA IE = 1.0mA IC = 5A IC = 10A IC = 10A IC = 5A IC = 10A IB = 0.5A IB = 1.25A IB = 1.25A VCE = 4V VCE = 4V IC = 0 IB = 0 VBE = -1.5V Min. Typ Max. 1.5 1.5 6 1.0 Units mA 250 7 1.0 1.5 1.5 20 10 60 V (1) DYNAMIC CHARACTERISTICS fT Transition Frequency IC = 1.0A f = 10MHz Turn-On Time Storage Time Fall Time IC = 10A IB1 = 1.25A IC = 10A VCC = 150V VCC = 150V 1.0 2 0.5 µs VCE = 15V 8 MHz ton ts tf IB1 = -IB2 = 1.25A Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8172 Issue 1 Page 2 of 3 SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX12 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO-204AA) METAL PACKAGE Underside View Pin 1 - Base Pin 2 - Emitter Case - Collector S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8172 Issue 1 Page 3 of 3 22.23 (0.875) max.