BUX77

SILICON PLANAR EPITAXIAL NPN TRANSISTOR BUX77 • • • High Power Hermetic TO-66 Metal Package Ideally suited for Driver Circuits, Switching and Amplifier Applications Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 100V 80V 6V 5A 0.8A 40W 0.23W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols RθJC Parameters Thermal Resistance, Junction To Case Min. Typ. Max. 4.4 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 5514 Issue 3 Page 1 of 3 Website: http://www.semelab-tt.com SILICON PLANAR EPITAXIAL NPN TRANSISTOR BUX77 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols V(BR)CEO V(BR)CES V(BR)EBO ICEO ICBO IEBO (1) Parameters Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Test Conditions IC = 50mA IC = 2mA IE = 1.0mA VCE = 60V VCB = 80V IB = 0 VBE = 0 IC = 0 IB = 0 IE = 0 TC = 150°C VEB = 4V IC = 0.5A IC = 2A IC = 0 VCE = 5V VCE = 5V VCE = 5V VCE = 5V TC = -40°C Min. 80 100 6 Typ Max. Units V 10 0.5 150 0.5 50 50 30 25 1.0 V 1.3 120 µA hFE (1) Forward-current transfer ratio IC = 5A IC = 1.0A VCE(sat) VBE(sat) (1) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 5A IC = 5A IB = 0.5A IB = 0.5A DYNAMIC CHARACTERISTICS |hfe| Small signal forward-current transfer ratio Turn-On Time IC = 0.5A f = 20MHz IC = 5A IB1 = 0.5A IC = 5A IB1 = - IB2 = 0.5A VCC = 40V VCC = 40V 0.3 0.4 µs 1.1 2.5 VCE = 5V 1.5 ton toff Turn-Off Time Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 5514 Issue 3 Page 2 of 3 SILICON PLANAR EPITAXIAL NPN TRANSISTOR BUX77 MECHANICAL DATA Dimensions in mm (inches) 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. 3.68 (0.145) rad. max. 14.48 (0.570) 14.99 (0.590) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) TO66 (TO-213AA) Pin 1 - Base Pin 2 - Emitter Case - Collector S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com 11.94 (0.470) 12.70 (0.500) Document Number 5514 Issue 3 Page 3 of 3 24.13 (0.95) 24.63 (0.97) 1 2 0.71 (0.028) 0.86 (0.034)