BUY82

BUY82

  • 厂商:

    SEME-LAB

  • 封装:

  • 描述:

    BUY82 - NPN SILICON PLANAR EPITAXIAL TRANSISTOR IN HERMETICALLY SEALED METAL CASE - Seme LAB

  • 详情介绍
  • 数据手册
  • 价格&库存
BUY82 数据手册
BUY82 MECHANICAL DATA Dimensions in mm(Inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) NPN SILICON PLANAR EPITAXIAL TRANSISTOR IN HERMETICALLY SEALED METAL CASE 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 45° TO39 PACKAGE(TO205AD) Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PTOT Maximum Collector to Base Continuous Voltage Maximum Collector to Emitter Continous voltage Maximum Emitter to Base Continouse reverse Voltage Maximum Continuous Collector Current Maximum Continuous Base Current Maximum total Power Dissipation up to Tcase = 25°C Tcase= 100°C Tamb = 25°C Tc Tstg Junction Temperature Storage Temperature 150V 60V 7V 10A 2A 30W 15W 1W -65 to +175°C 150°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3298 Issue 1 BUY82 THERMAL CHARACTERISTICS Rth j-case Rth j-amb Thermal resistance to case Thermal resistance juntion to ambient Max Max 5.0°C/W 150°C/W ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter h21E VCE(SAT) VBE(SAT) ICBO IEBO ton toff C22b C11b fT Static value of common-emitter forward current transfer ratio * Collector-Emitter Saturation Voltage* Base - Emitter Saturation Voltage* Collector - Base Cut-off Current Emitter - Base Cut-off Current Turn on time Turn off time Output capacitance Input capacitance Transition Frequency Test Conditions VCE = 5V VCE = 5v IC = 10A IC = 1.5A IC = 10A IC = 1.5A IC = 1.5A IC = 10A IB = 5V IB = 150mA IB = 1.0A IB = 150mA TCase = 150°C VEB = 5V IC = 5A IC = 10A IC = 5A IC = 10A VCB = 10V f =1MHz VEB = 0.5V f =1MHz VCE = 10V f = 20MHz IC = IC = Min. 40 15 Typ. Max. Unit — 1.0 0.8 1.8 1.2 10 500 10 1 1.5 1 1 200 pF 850 µs µA V VCB = 100V IE = 0 IC = 0 IB1 = 0.5A IB1 = 1A IB1 = - IB2 =0.5A IB1 = - IB2 = 1A IE = 0 0 100mA 40 MHz * Measured under pulse conditions: Pulse length = 300 ms, duty cycle = 1.5% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3298 Issue 1
BUY82
1. 物料型号:BUY82 2. 器件简介:NPN硅平面外延晶体管,封装在密封的金属外壳中。 3. 引脚分配: - Pin 1 = 发射极(Emitter) - Pin 2 = 基极(Base) - Pin 3 = 集电极(Collector) 4. 参数特性: - VCBO:最大集电区到基区连续电压150V - VCEO:最大集电区到发射区连续电压60V - VEBO:最大发射区到基区连续反向电压7V - Ic:最大连续集电极电流10A - Ib:最大连续基极电流2A - PTOT:最大总功率耗散(Tcase=25°C时30W,Tcase=100°C时15W,Tamb=25°C时1W) - Tj:结温范围-65到+175°C - Tstg:存储温度150°C 5. 功能详解:BUY82是一个NPN硅平面外延晶体管,具有高功率和高电压特性,适用于需要大电流和高电压的应用场合。 6. 应用信息:适用于高功率放大和开关应用。 7. 封装信息:晶体管封装在密封的金属外壳中,有助于提高热性能和机械稳定性。
BUY82 价格&库存

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