IRF130SMD05N

IRF130SMD05N IRFN130SMD05 MECHANICAL DATA Dimensions in mm (inches) 7 .5 4 (0 .2 9 6 ) 0 .7 6 (0 .0 3 0 ) m in . 2 .4 1 (0 .0 9 5 ) 2 .4 1 (0 .0 9 5 ) 0 .1 2 7 (0 .0 0 5 ) 3 .1 7 5 (0 .1 2 5 ) M ax. N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDSS ID(cont) RDS(on) FEATURES 3 .0 5 (0 .1 2 0 )  ! 5 .7 2 (.2 2 5 ) 100V 11A 0.19W 0 .7 6 (0 .0 3 0 ) m in . 0 .1 2 7 (0 .0 0 5 ) 16 PLC S 0 .5 0 (0 .0 2 0 ) 7 .2 6 (0 .2 8 6 ) 0 .1 2 7 (0 .0 0 5 ) 1 0 .1 6 (0 .4 0 0 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) • HERMETICALLY SEALED • SIMPLE DRIVE REQUIREMENTS SMD 05 IRF130SMD05 PAD1 = GATE PAD 2 DRAIN PAD3 = SOURCE • LIGHTWEIGHT • SCREENING OPTIONS AVAILABLE • ALL LEADS ISOLATED FROM CASE IRFN130SMD05 PAD1 = SOURCE PAD 2 = DRAIN PAD3 = GATE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RqJC Gate – Source Voltage Continuous Drain Current @ Tcase = 25°C Continuous Drain Current @ Tcase = 100°C Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case ±20V 11A 7A 44A 45W 0.36W/°C –55 to 150°C 2.8°C/W max. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk Prelim. 10/00 IRF130SMD05N IRFN130SMD05 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter BVDSS STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage Test Conditions VGS = 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS VDS ³ 15V VGS = 0 VGS = 20V VGS = –20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDSS ID = 11A VDS = 0.5BVDSS VDD = 50V ID = 11A RG = 7.5W ID = 11A ID = 7A ID = 11A ID = 250mA IDS = 7A VDS = 0.8BVDSS TJ = 125°C ID = 1mA Min. 100 Typ. Max. Unit V DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) Static Drain – Source On–State Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate – Source Leakage Reverse Gate – Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Reference to 25°C 0.1 0.19 0.22 2 3 25 250 100 -100 650 240 44 12.8 1.0 3.8 28.5 6.3 16.6 30 75 40 45 11 43 4 V / °C W V )W( S(W VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr LD LS mA nA pF nC nC ns SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge PACKAGE CHARACTERISTICS Internal Drain Inductance Internal Source Inductance IS = 11A VGS = 0 IS = 11A TJ = 25°C di / dt £ 100A/ms VDD £ 50V (from 6mm down drain lead pad to centre of die) A V ns TJ = 25°C 1.5 300 3 8.7 8.7 mC nH (from 6mm down source lead to centre of source bond pad) Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk Prelim. 10/00