IRF240_09

IRF240_09

  • 厂商:

    SEME-LAB

  • 封装:

  • 描述:

    IRF240_09 - N-CHANNEL POWER MOSFET - Seme LAB

  • 详情介绍
  • 数据手册
  • 价格&库存
IRF240_09 数据手册
N-CHANNEL POWER MOSFET IRF240 • Low RDS(on) MOSFET Transistor In A Hermetic Metal Package Designed For Switching, Power Supply, Motor Control and Amplifier Applications Screening Options Available • • ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS VGS ID ID IDM PD EAS dv/dt TJ Tstg Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current (1) Total Power Dissipation at Single Pulse Avalanche Energy Peak Diode Recovery (3) Junction Temperature Range Storage Temperature Range Tc = 25°C Tc = 100°C Tc = 25°C Derate Above 25°C (2) 200V ±20V 18A 11A 72A 125W 1.0W/°C 12.5mJ 5V/ns -55 to +150°C -55 to +150°C THERMAL PROPERTIES Symbols RθJC Parameters Thermal Resistance, Junction To Case Min. Typ. Max. 1.0 Units °C/W INTERNAL PACKAGE INDUCTANCE Symbols LD LS Parameters Internal Drain Inductance Internal Source Inductance Min. Typ. 5 13 Max. Units nH Notes Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) @VDD = 50V, L ≥ 2.1mH, Peak IL = 18A, Starting TJ = 25°C (3) (4) @ ISD ≤ 18A, di/dt ≤ 160A/µs, VDD ≤ BVDSS, TJ ≤ 150°C, Suggested RG = 9.1Ω Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 3332 Issue 2 Page 1 of 3 Website: http://www.semelab-tt.com N-CHANNEL POWER MOSET IRF240 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols BVDSS ∆BVDSS ∆TJ RDS(on) VGS(th) gfs IDSS IGSS IGSS Parameters Drain-Source Breakdown Voltage Temperature Coefficent of Breakdown Voltage Static Drain-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Forward Gate-Source Leakage Reverse Gate-Source Leakage Test Conditions VGS = 0 Reference to 25°C VGS = 10V VGS = 10V VDS = VGS VDS ≥ 15V VGS = 0 Min. 200 Typ Max. Units V ID = 1.0mA ID = 1.0mA ID = 11A ID = 18A (4) 0.29 0.18 0.21 2 6.1 25 250 100 4 V/°C (4) Ω V S( ) ID = 250µA I DS = 11A (4) VDS = 0.8BVDSS TJ = 125°C µA VGS = 20V VGS = -20V nA -100 DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VGS = 0 VDS = 25V f = 1.0MHz VGS = 10V ID = 18A VDS = 0.5BVDSS VDD = 100V ID = 18A RG = 9.1Ω 32 2.2 14 1300 400 130 60 10.6 38 20 152 58 67 ns nC pF SOURCE-DRAIN DIODE CHARACTERISTICS IS ISM VSD trr Qrr Continuous Source Current Pulse Source Current (1) 18 72 IS = 18A VGS = 0 IS = 18A VDD ≤ 50V (4) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge TJ = 25°C 1.5 500 (4) V ns TJ = 25°C di/dt = 100A/µs 5.3 µC S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 3332 Issue 2 Page 2 of 3 N-CHANNEL POWER MOSET IRF240 MECHANICAL DATA Dimensions in mm (inches) 3 9 .9 5 (1 .5 7 3 ) m ax. 3 0 .4 0 (1 .1 9 7 ) 3 0 .1 5 (1 .1 8 7 ) 1 7 .1 5 (0 .6 7 5 ) 1 6 .6 4 (0 .6 5 5 )  2 0 .3 2 (0 .8 0 0 ) 1 8 .8 0 (0 .7 4 0 ) d ia . 1 1 .1 8 (0 .4 4 0 ) 1 0 .6 7 (0 .4 2 0 ) 1 .7 8 (0 .0 7 0 ) 1 .5 2 (0 .0 6 0 ) 1 .5 7 (0 .0 6 2 ) 1 .4 7 (0 .0 5 8 ) d ia . 2 p lc s . TO3 (TO-204AE) Pin 1 - Gate Pin 2 - Source Case - Drain S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com 1 2 .0 7 (0 .4 7 5 ) 1 1 .3 0 (0 .4 4 5 ) 7 .8 7 (0 .3 1 0 ) 6 .9 9 (0 .2 7 5 ) 2 6 .6 7 (1 .0 5 0 ) m ax. 4 .0 9 (0 .1 6 1 ) 3 .8 4 (0 .1 5 1 ) d ia . 2 p lc s . Website: http://www.semelab-tt.com Document Number 3332 Issue 2 Page 3 of 3
IRF240_09
### 物料型号 - 型号:IRF240

### 器件简介 - IRF240是一款N-CHANNEL POWER MOSFET,具有低$R_{DS}(on)$,封装在密封金属包中,适用于开关、电源、电机控制和放大器应用。

### 引脚分配 - Pin 1: Gate(栅极) - Pin 2: Source(源极) - Case: Drain(漏极)

### 参数特性 - 绝对最大额定值: - VDS(漏源电压):200V - VGS(栅源电压):+20V - ID(连续漏电流,25°C):18A - ID(连续漏电流,100°C):11A - IDM(脉冲漏电流):72A - PD(25°C时总功率耗散):125W - EAS(单脉冲雪崩能量):12.5mJ - dv/dt:5V/ns - TJ(结温范围):-55 to +150°C - Tstg(存储温度范围):-55 to +150°C

- 热性能: - ROJC(结到外壳的热阻):1.0°C

- 内部封装电感: - LD(内部漏极电感):5nH - LS(内部源极电感):13nH

### 功能详解 - IRF240具有低导通电阻和高效率,适用于需要高功率处理的应用。其设计能够承受高电压和大电流,同时保持较低的功耗。

### 应用信息 - 适用于开关、电源、电机控制和放大器应用。

### 封装信息 - 封装在密封金属包中,具体尺寸和封装类型在文档中未详细说明,但通常这种封装适用于高功率和高可靠性的应用。
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