IRF250

IRF250 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE 7.87 (0.310) 6.99 (0.275) 1 20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 200V 30A 0.085Ω • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE 1.57 (0.062) 1.47 (0.058) dia. 2 plcs. TO–3 Metal Package Pin 1 – Gate Pin 2 – Source Case – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS IAR EAR dv/dt TJ , Tstg TL Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 12.07 (0.475) 11.30 (0.445) ±20V (VGS = 0 , Tcase = 25°C) (VGS = 0 , Tcase = 100°C) 30A 19A 120A 150W 1.2W/°C 200mJ 30A 2 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy 2 Avalanche Current 2 Repetitive Avalanche Energy Peak Diode Recovery 3 15mJ 5V/ns –55 to +150°C 300°C Operating and Storage Temperature Range Lead Temperature 1.6mm (0.63”) from case for 10 sec. Notes 1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%. 2) @ VDD = 50V , L ≥ 330mH , RG = 25Ω , Peak IL = 30A , Starting TJ = 25°C. 3) @ ISD ≤ 30A , di/dt ≤ 190A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 2.35Ω Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 9/96 IRF250 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain – Source Breakdown Voltage ∆BVDSS Temperature Coefficient of ∆TJ Breakdown Voltage Static Drain – Source On–State RDS(on) Resistance 1 VGS(th) Gate Threshold Voltage gfs Forward Transconductance 1 IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Zero Gate Voltage Drain Current Forward Gate – Source Leakage Reverse Gate – Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Test Conditions VGS = 0 ID = 1mA Reference to 25°C ID = 1mA VGS = 10V ID = 19A VGS = 10V ID = 30A VDS = VGS ID = 250mA VDS > 15V ID = 19A VGS = 0 VDS = 0.8BVDSS TJ = 125°C VGS = 20V VGS = –20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 30A VDS = 0.5BVDSS VDD = 100V ID = 30A RG = 2.35Ω Min. 200 Typ. Max. Unit V 0.029 0.085 0.090 4 25 250 100 –100 3500 700 110 55 8 30 115 22 60 35 190 170 130 30 120 1.9 950 9.0 Negligible 5.0 13 0.83 0.12 30 V/°C Ω V S (É) µA nA 2 9 pF nC ns SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 2 IS = 30A TJ = 25°C Diode Forward Voltage 1 VGS = 0 Reverse Recovery Time IF = 30A TJ = 25°C Reverse Recovery Charge 1 di / dt ≤ 100A/µs VDD ≤ 50V Forward Turn–On Time PACKAGE CHARACTERISTICS Internal Drain Inductance (measured from 6mm down drain lead to centre of die) Internal Source Inductance (from 6mm down source lead to source bond pad) THERMAL CHARACTERISTICS Thermal Resistance Junction – Case Thermal Resistance Case – Sink Thermal Resistance Junction – Ambient A V ns µC nH RθJC RθCS RθJA °C/W Notes 1) Pulse Test: Pulse Width ≤ 300ms, δ ≤ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 9/96