IRF450

N-CHANNEL POWER MOSFET IRF450 • • • Hermeticaly Sealed TO-3 Metal Package Simple Drive Requirements Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS VGS ID ID IDM PD TJ Tstg Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current (2) Total Power Dissipation at Junction Temperature Range Storage Temperature Range Tc = 25°C Tc = 100°C Tc = 25°C Derate Above 25°C 500V ±20V 13A 8A 52A 150W 1.2W/°C -55 to +150°C -55 to +150°C THERMAL PROPERTIES Symbols RθJC RθJA Parameters Thermal Resistance, Junction To Case Thermal Resistance, Junction To Ambient Max. 0.83 30 Units °C/W INTERNAL PACKAGE INDUCTANCE Symbols LD LS Parameters Internal Drain Inductance Internal Source Inductance Typ. 5 13 Units nH Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% (2) Repetitive Rating: Pulse Width limited by max. junction temperature. Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 9118 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com N-CHANNEL POWER MOSET IRF450 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols BVDSS RDS(on) VGS(th) gfs (1) (1) Parameters Drain-Source Breakdown Voltage Static Drain-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Forward Gate-Source Leakage Reverse Gate-Source Leakage Test Conditions VGS = 0 VGS = 10V VDS = VGS VDS ≥ 15V VDS = 500V VDS = 400V VGS = 20V VGS = -20V ID = 250 µA ID = 7A ID = 250µA I D = 7A VGS = 0 TC = 125°C Min. 500 Typ. Max. Units V 0.4 2 6 250 1000 100 4 Ω V S(Ʊ) µA IDSS IGSS IGSS nA -100 DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VGS = 0 VDS = 25V f = 1.0MHz VGS = 10V ID = 16A VDS = 0.8 BVDSS VDD = 250V ID = 12A RG = 2.35Ω 2700 600 240 82 40 42 35 190 170 130 ns nC pF SOURCE-DRAIN DIODE CHARACTERISTICS IS ISM (1) Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time (1) 13 52 IS = 13A VGS = 0 IS = 13A VDD ≤ 50V TJ = 150°C di/dt = 100A/µs 1300 7.4 TJ = 25°C 1.4 A VSD Trr Qrr (1) V ns µC Reverse Recovery Charge S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9118 Issue 1 Page 2 of 3 N-CHANNEL POWER MOSET IRF450 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO204-AA) Pin 1 - Gate Pin 2 - Source Case - Drain S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9118 Issue 1 Page 3 of 3 22.23 (0.875) max.