IRF9130_03

IRF9130 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES 1 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 –100V –11A 0.2Ω 20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.070) 1.52 (0.060) 7.87 (0.310) 6.99 (0.275) • HERMETICALLY SEALED TO–3 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE 1.09 (0.043) 0.97 (0.038) dia. 2 plcs. TO–3 Metal Package Pin 1 – Gate Pin 2 – Source Case – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS IAR EAR dv/dt TJ , Tstg TL Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current 1 Repetitive Avalanche Energy 1 Peak Diode Recovery Lead Temperature 3 2 12.07 (0.475) 11.30 (0.445) ±20V (VGS = 0 , Tcase = 25°C) (VGS = 0 , Tcase = 100°C) –11A –7.0A –50A 75W 0.6W/°C 81mJ –11A 7.5mJ –5.5V/ns –55 to +150°C 300°C Operating and Storage Temperature Range 1.6mm (0.63”) from case for 10 sec. Notes 1) Repetitive Rating – Pulse width limited by maximum junction temperature. 2) @ VDD = –25V , L ≥ 1.0mH , RG = 25Ω , Peak IL = –11A , Starting TJ = 25°C 3) @ ISD ≤ –11A , di/dt ≤ –140A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 7.5Ω Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5676 Issue 1 IRF9130 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain – Source Breakdown Voltage ∆BVDSS Temperature Coefficient of ∆TJ Breakdown Voltage Static Drain – Source On–State RDS(on) Resistance 1 VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS IGSS IGSS CDC Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Zero Gate Voltage Drain Current Forward Gate – Source Leakage Reverse Gate – Source Leakage Test Conditions VGS = 0 ID = –1mA Reference to 25°C ID = –1mA VGS = –10V ID = –7.0A VGS = –10V ID = –11A VDS = VGS ID = –250µA VDS ≥ –15V IDS = –7.0A VGS = 0 VDS = 0.8 x Max TJ = 125°C VGS = –20V VGS = 20V Min. –100 Typ. Max. Unit V –0.087 0.3 0.35 –4 –25 –250 –100 100 12 860 350 125 15 1.0 2.0 29 7.1 21 60 140 140 140 –11 –50 V / °C Ω V S( ) µA nA –2 3 DYNAMIC CHARACTERISTICS Drain to Case Capacitance VGS = 0 Input Capacitance VDS = – 25V Output Capacitance f = 1MHz Reverse Transfer Capacitance Total Gate Charge VGS = –10V Gate – Source Charge ID = –11A Gate – Drain (“Miller”) Charge VDS = 0.5 x max Turn–On Delay Time VDD = –50V Rise Time ID = –11A Turn–Off Delay Time RG = 7.5Ω Fall Time SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 2 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn–On Time IS = –11A TJ = 25°C VGS = 0 IF = –11A VDD ≤ –50V di / dt ≤ –100A/µs TJ = 25°C pF nC ns A V ns µC –4.7 250 3.0 Negligible 5.0 13 1.67 0.12 30 PACKAGE CHARACTERISTICS Internal Drain Inductance (measured from 6mm down drain lead to centre of die) Internal Source Inductance (from 6mm down source lead to source bond pad) THERMAL CHARACTERISTICS Thermal Resistance Junction – Case Thermal Resistance Case – Sink Thermal Resistance Junction – Ambient 1) Pulse Test: Pulse Width ≤ 300ms, δ ≤ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk nH RθJC RθCS RθJA Notes °C/W Semelab plc. Document Number 5676 Issue 1