IRFAG50

N-CHANNEL POWER MOSFET IRFAG50 • Low RDS(on) Power MOSFET Transistor In A Hermetic Metal TO3 Package Designed For Switching, Power Supply, Motor Control and Amplifier Applications Screening Options Available • • ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS VGS ID ID IDM PD EAS dv/dt TJ Tstg Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Continuous Drain Current (1) Pulsed Drain Current Total Power Dissipation at Single Pulse Avalanche Energy Peak Diode Recovery (3) Junction Temperature Range Storage Temperature Range Tc = 25°C Tc = 100°C Tc = 25°C Derate Above 25°C (2) 1000V ±20V 5.6A 3.5A 22A 150W 1.2W/°C 860mJ 1.0V/ns -55 to +150°C -55 to +150°C THERMAL PROPERTIES Symbols RθJC Parameters Thermal Resistance, Junction To Case Min. Typ. Max. 0.83 Units °C/W INTERNAL PACKAGE INDUCTANCE Symbols LD LS Parameters Internal Drain Inductance Internal Source Inductance Min. Typ. 5 13 Max. Units nH Notes Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) @VDD = 50V, L = 52 mH, Peak IL = 5.6A, Starting TJ = 25°C, RG = 25Ω (3) (4) @ ISD ≤ 5.6A, di/dt ≤ 120A/µs, VDD ≤ 600V, TJ ≤ 150°C, Suggested RG = 6.2Ω Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8699 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com N-CHANNEL POWER MOSET IRFAG50 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols BVDSS RDS(on) VGS(th) gfs IDSS IGSS IGSS Parameters Drain-Source Breakdown Voltage Static Drain-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Forward Gate-Source Leakage Reverse Gate-Source Leakage Test Conditions VGS = 0 VGS = 10V VDS = VGS VDS ≥ 100 VGS = 0 ID = 250µA ID = 3.2A (4) Min. 1000 Typ Max. Units V 1.7 2 5.2 7.8 2.0 4 Ω V S(Ʊ) ID = 250µA IDS = 3.2A (4) VDS = 0.8 × VDS(MAX) TJ = 125°C 250 1000 100 µA VGS = 20V VGS = -20V nA -100 DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VGS = 0 VDS = 25V f = 1.0MHz VGS = 10V ID = 5.6A VDS = 0.4 × VDS(MAX) VDD = 500V ID = 5.6A RG = 6.2Ω RD = 91Ω 2800 400 180 130 13 74 20 29 140 40 200 20 110 30 44 210 60 ns nC pF SOURCE-DRAIN DIODE CHARACTERISTICS IS ISM VSD trr Qrr Continuous Source Current Pulse Source Current (1) 5.6 22 IS = 5.6A VGS = 0 IS = 5.6A VDD ≤ 50V TJ = 25°C di/dt = 100A/µs (4) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge TJ = 25°C 1.8 260 1.8 580 3.9 1200 8.4 V ns µC S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8699 Issue 1 Page 2 of 3 N-CHANNEL POWER MOSET IRFAG50 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO-204AA) Pin 1 - Gate Pin 2 - Source Case - Drain S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8699 Issue 1 Page 3 of 3 22.23 (0.875) max.