IRFY340

IRFY340 MECHANICAL DATA Dimensions in mm (inches) 10.41 10.67 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 N–CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS BVDSS ID RDS(on) FEATURES • 0.89 1.14 16.38 16.89 13.39 13.64 123 400V 8.7A 0.55Ω 12.70 19.05 10.41 10.92 2.54 BSC D 2.65 2.75 G S • • • • HERMETICALLY SEALED TO-220 METAL PACKAGE SIMPLE DRIVE REQUIREMENTS ALL LEADS ISOLATED FROM CASE LIGHTWEIGHT SCREENING OPTIONS AVAILABLE TO-220M (TO-257AB) Pin 1 – Gate Pin 2 – Drain Pin 3 – Source ABSOLUTE MAXIMUM RATINGS T VDS VGS ID ID IDM PD Tj,Tstg TL Rthj-case NOTES: CASE = 25°C unless otherwise stated Drain - Source Voltage Gate - Source Voltage Drain Current - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) 1 Drain Current - Pulsed Total Power Dissipation at Tcase ≤ 25°C De-rate Linearly above 25°C Operating Junction and Storage Temperature Range Lead Temperature (for 5 sec) Thermal Resistance Junction - Case 1) Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width ≤ 380µS, Duty Cycle, δ 2% 400V ±20V 8.7A 5.5A 35A 100W 0.8W/°C -55 to +150°C 300°C 1.25°C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk DOC 7895, ISSUE 1 IRFY340 STATIC ELECTRICAL RATINGS (T Parameter BVDSS ∆BVDSS ∆ TJ IDSS IGSS VGS(TH) RDS(ON) gFS Drain – Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Zero Gate Voltage Drain Current Gate – Source Leakage Current Gate Threshold Voltage Drain – Source On State Resistance Forward Transconductance 2 case =25°C unless otherwise stated) Test Conditions VGS = 0V ID = 1.0mA VDS=320V VGS = ±20V VDS = VGS VGS = 10V VGS = 10V VDS ≥ 15V VGS = 0V TJ = 125°C VDS = 0V ID = 250µA ID = 5.5A ID = 8.7A ID = 5.5A ID = 1.0mA Reference to 25°C Min. Typ. 400 2.0 4.9 0.46 - Max. 25 250 ±100 4.0 0.55 0.63 - Unit V V/°C µA nA V Ω Ω S DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd Td(on) tr Td(off) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 2 2 VDS = 25V f = 1.0MHz VGS = 0V 2 1400 350 230 - 65 10 40.5 25 92 79 58 pF Gate – Source Charge Gate – Drain Charge Turn-On Delay Rise Time Turn-Off Delay Time Fall Time VDS = 200V VGS = 10V ID = 8.7A - nC VDD = 200V RG = 9.1Ω ID = 8.7A VGS = 10V - ns SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Qrr Ton Continuous Source Current (MAX) Pulsed Source Current (MAX) Diode Forward Voltage 2 VGS = 0V IS = 8.7A IS = 8.7A VDD ≤ 50V VGS = 0V di/dt=100A/µs Negligible 8.7 35 1.5 600 5.6 A V ns µC Reverse Recovery Time 2 Reverse Recovery Charge Forward Turn-On Time 2 Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk DOC 7895, ISSUE 1