MCA104

MCA104 MECHANICAL DATA Dimensions in mm (inches) MULTI-CHIP ARRAY TWO NPN AND TWO PNP HIGH SPEED, MEDIUM POWER SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE DESCRIPTION The MCA104 is a ceramic surface mount transistor array 8 .8 9 (0 .3 5 0 ) 1 .2 7 (0 .0 5 0 ) ty p . 0 .3 0 (0 .0 1 2 ) Rad. 4 p lc s designed for high reliability applications. 1 .1 4 ± 0 .1 5 (0 .0 4 5 ± 0 .0 0 6 ) It contains 2 NPN Bipolar Transistors and 2 PNP Bipolar Transistors. 0 .6 5 (0 .0 2 5 ) ty p .    ' ! " # $ % &  7 .2 4 (0 .2 8 5 ) FEATURES 0 .2 3 (0 .0 0 9 ) R ad. 1 8 p lc s • Ceramic Surface Mount Package. • Screening Options Available & % $ # " ! NPN DEVICES 1 .1 4 (0 .0 4 5 ) ty p 2 .5 4 (0 .1 0 0 ) 1 .4 0 (0 .0 5 5 ) Nom . • VCBO = 75V • VCBO = 400V • IC = 600mA Pinout: NPN 2 = E1 3 = B1 4 = C1 PNP 6 = C2 7 = B2 8 = E2 PNP 11 = E3 12 = B3 13 = C3 NPN 15 = C4 16 = B4 17 = E4 PNP DEVICES • VCBO = 60V • VCEO = 60V • IC = 600 mA 1,5,9,10,14,18 NO CONNECTION ABSOLUTE MAXIMUM RATINGS VCBO VCEO VEBO IC PD sj-a Tj,Tstg Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current (per device) Power Dissipation (per device) Thermal Resistance (junction to ambient) Storage, Junction Temperature NPN Channel PNP Channel 75V 40V 6 600mA 350mW -60V - 60V -5 600mA 350mW 350°C -55 to +200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 4/00 MCA104 ELECTRICAL CHARACTERISTICS Parameter VCEO(sus)* V(BR)CBO* V(BR)EBO* ICEX* ICBO* IEBO* IBL* VCE(sat)* VBE(sat)* Collector – Emitter Sustaining Voltage Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector Cut-off Current (IC = 0) Collector – Base Cut-off Current Emitter Cut-off Current (IC = 0) Base Current Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage (Tcase = 25°C unless otherwise stated) NPN DEVICES Typ. Max. Unit V Test Conditions IC = 10mA IC = 10mA IE = 10mA IB = 0 IE = 0 TC = 125°C IC = 0 VCE = 60V IC = 150mA IC = 500mA IC = 150mA IC = 500mA IC = 0.1mA IC = 1mA VEB = 3V (off) VEB = 3V (off) IB = 15mA IB = 50mA IB = 15mA IC = 50mA VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCE = 1V VCE = 10V IC = 0 VCE = 60V VCB = 60V Min. 40 75 6 V V 10 10 10 10 20 0.3 1 nA nA m A nA nA V V 0.6 35 50 75 35 100 50 40 1.2 2 hFE* DC Current Gain IC = 10mA TA = –55°C IC = 10mA IC = 150mA IC = 150mA IC = 500mA — 300 * Pulse test tp = 300ms , d£ 2% DYNAMIC CHARACTERISTICS Parameter fT Cob Cib hfe Transition Frequency Output Capacitance Input Capacitance Small Signal Current Gain (Tcase = 25°C unless otherwise stated) NPN DEVICES Typ. Max. Unit MHz 8 30 50 75 300 375 pF pF 300 Test Conditions IC = 20mA VCB = 10V VBE = 0.5V IC = 1mA IC = 10mA VCE = 20V IE = 0 IC = 0 VCE = 10V VCE = 10V f =100MHz f = 1.0MHz f = 1.0MHz f = 1kHz f = 1kHz Min. SWITCHING CHARACTERISTICS (RESISTIVE LOAD) Parameter td tr ts tf Delay Time Rise Time Storage Time Fall Time (Tcase = 25°C unless otherwise stated) Test Conditions VCC = 30V IC1 = 150mA VCC = 30V VBE = 0.5V (off) IB1 = 15mA IC = 150mA IB1 = IB2 = 15mA Min. Typ. Max. Unit 10 25 225 60 ns ns ns ns fT is defined as the frequency at which hFE extrapolates to unity. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 4/00 MCA104 ELECTRICAL CHARACTERISTICS Parameter VCEO(sus)* V(BR)CBO* V(BR)EBO* ICEX* ICBO* IBEO VCE(sat)* VBE(sat)* Collector – Emitter Sustaining Voltage Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector Cut-off Current Collector – Base Cut-off Current Base Cut-off Current Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage (Tcase = 25°C unless otherwise stated) PNP DEVICES Typ. Max. Unit V V V 50 0.01 10 m Test Conditions IC = 10mA IC = 10mA IE = 10mA VCE = 30V IE = 0 TC = 125°C VCE = 30V IC = 150mA IC = 500mA IC = 150mA IC = 500mA IC = 0.1mA IC = 1mA VBE = 0.5V IB = 15mA IB = 50mA IB = 15mA IB = 50mA VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCE = 10V IC = 0 VBE = 0.5V VCB = 50V Min. –60 –60 –5 nA A 50 –0.4 –1.6 –1.3 –2.6 75 100 100 100 50 300 nA V V hFE* DC Current Gain IC = 10mA IC = 150mA IC = 500mA — * Pulse test tp = 300ms , d£ 2% DYNAMIC CHARACTERISTICS Parameter fT Cob Cib Transition Frequency Output Capacitance Input Capacitance (Tcase = 25°C unless otherwise stated) PNP DEVICES Typ. Max. Unit MHz 8 30 pF pF 200 Test Conditions IC = 50mA VCB = 10V VBE = 2V VCE = 20V IE = 0 IC = 0 f = 100MHz f = 1.0MHz f = 1.0MHz Min. ELECTRICAL CHARACTERISTICS Parameter ton td tr toff ts tf Turn-on Time Delay Time Rise Time Turn-off Time Storage Time Fall Time (Tcase = 25°C unless otherwise stated) Test Conditions VCC = 30V IC = 150mA IB1 = 15mA VCC = 6V IC = 150mA IB1 = IB2 = 15mA Min. Typ. 26 6.0 20 70 50 20 Max. Unit 45 10 40 100 80 30 ns ns Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 4/00