MCA3703

MCA3703 MECHANICAL DATA Dimensions in mm (inches) QUAD N–CHANNEL ENHANCEMENT MOSFETS 0.30 (0.012) Rad. 4 plcs 1.14 – 0.15 (0.045 – 0.006) 8.89 (0.350) 1.27 (0.050) typ. 0.65 (0.025) typ. 12 11 10 9 8 7 13 14 15 16 17 18 1 2 FEATURES 0.23 (0.009) Rad. 18 plcs 7.24 (0.285) • HERMETIC CERAMIC SURFACE MOUNT PACKAGE • LIGHTWEIGHT • MILITARY SCREENING LEVEL OPTIONS • SPACE QUALITY LEVELS OPTIONS 1.40 (0.055) Nom. 6 5 4 3 1.14(0.045) typ 2.54 (0.100) APPLICATIONS LCC18 Ceramic Package Pin 1 - Drain 1 Pin 4 - Source 1 Pin 7 - Source 2 Pin 10 - Drain 3 Pin 13 - Gate 3 Pin 16 - Gate 4 Pin 2 - N/C Pin 5 - Gate 2 Pin 8 - N/C Pin 11 - N/C Pin 14 - Source 4 Pin 17 - N/C Pin 3 - Gate 1 Pin 6 - N/C Pin 9 - Drain 2 Pin 12 - Source 3 Pin 15 - N/C Pin 18 - Drain 4 • FAST SWITCHING • MOTOR CONTROLS • POWER SUPPLIES ABSOLUTE MAXIMUM RATINGS FOR EACH CHIP(Tcase = 25°C unless otherwise stated) VDS ID ID @Tc = 100°C IDM VGS PD RθJC TJ,Tstg Drain Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current * Gate Source Voltage Maximum Power Dissipation Thermal Resistance Junction to Case Operating and Storage Temperature Range 100V 1A 0.6A 4A ±20V 3.5W 35.7°C/W -55 to +150°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5519 Issue 1 MCA3703 ELECTRICAL CHARACTERISTICS FOR EACH CHIP(Tcase = 25°C unless otherwise stated) Parameter BVDSS Drain – Source Breakdown Voltage VGS(th) Gate Threshold Voltage IGSSF IGSSR IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr QRR Gate – Source Leakage Forward Gate – Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain Source On-State Resistance* Forward Transductance * Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time VDD = 50V RG = 24Ω (MOSFET switching times are essentially independent of operating temperature.) Test Conditions VGS = 0 VDS = VGS VGS = 20V VGS = -20V VDS = 80V. VGS = 10V VGS = 10V VDS = 15V VGS = 0 f = 1MHz VGS = 10V IDS = 1.0A ID = 1.0A VDS = 50V VGS =0 TC = 125°C ID = 0.6A ID = 1.0A IDS = 0.6A VDS = 25V ID = 1mA ID = 250µA Min. 100 2.0 Typ. Max. 4.0 100 -100 25 250 0.70 0.80 Unit V nA µA Ω S( ) Ω 0.86 180 82 15 15 7.5 7.5 20 25 40 40 pF nC ns BODY– DRAIN DIODE RATINGS & CHARACTERISTICS Modified MOS POWER Continuous Source Current Body , / 5 Diode Source Current* (Body Diode) Diode Forward Voltage * Reverse Recovery Time Reverse Recovery Charge 1.0 4.0 1.5 200 0.83 symbol showing the intergal P-N junction rectifier. A V ns µC IS = 1.0A IF =1.0A VGS = 0 TJ = 25°C di / dt = 100A/µs VDD = 50V Notes * Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5519 Issue 1