SML1004R2GXN

LAB TO–257 Package Outline. Dimensions in mm (inches) 10.41 (0.410) 10.67 (0.420) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) SEME SML1004R2GXN 4TH GENERATION MOSFET N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS 16.38 (0.645) 16.89 (0.665) 13.38 (0.527) 13.64 (0.537) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 123 12.07 (0.500) 19.05 (0.750) 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC 3.05 (0.120) BSC VDSS ID(cont) RDS(on) 1000V 3.0A 4.20W Pin 1 Gate Pin 2 Drain Pin 3 Source Pinout same as TO–220 Package. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS ID IDM VGS PD TJ , TSTG TL Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Total Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. 1000 3.0 12 ±30 100 0.8 –55 to 150 300 V A A V W W / °C °C STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Drain – Source Breakdown Voltage On State Drain Current 2 Drain – Source On State Resistance 2 Zero Gate Voltage Drain Current (VGS = 0V) Gate – Source Leakage Current Gate Threshold Voltage Test Conditions VGS = 0V , ID = 250mA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS =10V , ID = 0.5 ID [Cont.] VDS = VDSS VDS = 0.8VDSS , TC = 125°C VGS = ±30V , VDS = 0V VDS = VGS , ID = 1.0mA 2 Min. 1000 3.0 4.20 250 1000 ±100 4 Typ. Max. Unit V A W mA nA V 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 5/94 LAB DYNAMIC CHARACTERISTICS Characteristic CDC Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Drain to Case Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge3 Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions f = 1MHz VGS = 0V VDS = 25V f = 1MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C RG = 1.8W Min. Typ. 8 805 115 37 35 4.3 18 10 12 33 16 Max. Unit 12 950 160 60 55 7 27 20 24 50 32 ns nC pF pF SEME SML1004R2GXN SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current1(Body Diode) Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge VGS = 0V , IS = – ID [Cont.] dls / dt = 100A/ms IS = – ID [Cont.] 150 0.8 290 1.65 Test Conditions Min. Typ. Max. Unit 3.0 12 1.3 580 3.3 A V ns mC SAFE OPERATING AREA CHARACTERISTICS SOA1 SOA2 ILM Characteristic Safe Operating Area , t = 1 Sec Safe Operating Area , t = 1 Sec Inductive Current Clamped Test Conditions VDS = 0.4VDSS , IDS = PD / 0.4VDSS VDS = PD / ID [Cont.] , IDS = ID [Cont.] Min. 100 100 12 Typ. Max. Unit W A THERMAL CHARACTERISTICS RqJC RqJA Characteristic Junction to Case Junction to Ambient 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 Min. Typ. Max. Unit 1.20 °C/W 80 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 5/94