SML100HB06

SML100HB06 Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation Maximum rated values/ Electrical Properties Collector-emitter Voltage DC Collector Current Repetitive peak Collector Current Total PowerDissipation Tc=75C Tc=25C tp=1msec,Tc=75C Tc=25C Vces 600 100 130 200 340 V A A W Ic, nom Ic Icrm Ptot Gate-emitter peak voltage DC Forward Diode Current Repetitive Peak Forward Current I2t value per diode tp=1msec Vr=0V, tp=10msec, Tvj=125C RMS, 50Hz, t=1min Vges If Ifrm +/-20 100 200 V A A I2t Visol 1250 2500 A2sec V Isolation test voltage Collector-emitter saturation voltage Gate Threshold voltage Input capacitance Reverse transfer Capacitance Collector emitter cut off current Gate emitter cut off current Ic=75A,Vge=15V, Tc=25C Ic=75A,Vge=15V,Tc=125C Vce=Vge, Tvj=25C f=1MHz,Tvj=25C,Vce=25V, Vge=0V f=1MHz,Tvj=25C,Vce=25V, Vge=0V Vce=600V,Vge=0V,Tvj=25C Vce=600V,Vge=0V,Tvj=125C Vce=0V,Vge=20V,Tvj=25C Vce(sat) Vge(th) Cies Cres Ices Iges 4.5 1.95 2.2 5.5 4.3 0.4 1 1 2.45 6.5 V V nF nF 500 400 µA µA Turn on delay time Ic=100A, Vcc=300V Vge=+/15V,Rg=2.2Ω,Tvj=25C Vge=+/-15V,Rg=2.2Ω,Tvj=125C Ic=100A, Vcc=300V Vge=+/-15V,Rg=2.2Ω,Tvj=25C Vge=+/-15V,Rg=2.2Ω,Tvj=125C Ic=100A, Vcc=300V Vge=+/-15V,Rg=2.2Ω,Tvj=25C Vge=+/-15V,Rg=2.2Ω,Tvj=125C Ic=100A, Vcc=300V Vge=+/-15V,Rg=2.2Ω,Tvj=25C Vge=+/-15V,Rg=2.2Ω,Tvj=125C Ic=75A,Vce=300V,Vge=15V Rge=2.7Ω,Tvj=125C,L=35nH nsec td,on 25 26 10 11 130 150 20 30 1.0 2.9 450 40 1.0 nsec nsec tr nsec nsec td,off nsec nsec tf nsec mJ mJ A nH mΩ Rise time Turn off delay time Fall time Turn energy loss per pulse Eon Eoff Isc Lσce Rc Turn off energy loss per pulse Ic=75A,Vce=300V, Vge=15V Rge=Ω,Tvj=125C,L=30nH SC Data tp≤10µsec, Vge≤15V Tvj≤125C,Vcc=360V,Vce(max)Vces-Lσdi/dT Stray Module inductance Terminal-chip resistance Diode characteristics Forward voltage Ic=75A,Vge=0V, Tc=25C Ic=75A,Vge=0V, Tc=125C Vf 1.25 1.6 V 1.2 150 180 7.7 13 A Peak reverse recovery current If=75A, -di/dt=3000A/µsec Vce=300V,Vge=-10V,Tvj=25C Vce=300V,Vge=-10V,Tvj=125C Recovered charge If=75A, -di/dt=3000A/µsec Vce=600V,Vge=-10V,Tvj=25C Vce=600V,Vge=-10V,Tvj=125C If=75A, -di/dt=3000A/µsec Vce=600V,Vge=-10V,Tvj=25C Vce=600V,Vge=-10V,Tvj=125C Irm Qr µC Reverse recovery energy Erec 3.2 mJ mJ Thermal Properties Thermal resistance junction to case Igbt Diode RθJ-C Min Typ Max 0.37 0.67 K/W Thermal resistance case to heatsink Maximum junction temperature Maximum operating temperature RθC-hs Tvj Top -40 0.03 150 125 K/W C C Storage Temperature Tstg -40 125 C