SML100M12MSF

NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF • • • • RDS(on)max of 0.150 High Temperature Operation Tj = 200°C Low Gate Charge and Intrinsic Capacitance Positive Temperature Coefficient and Temperature Independent Switching Behaviour APPLICATIONS • • SMPS Motor Drive • • UPS Induction Heating ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS RDS(on)max ID IDM PD VGS TJ TJstg Drain-Source Blocking Voltage Drain-Source On-resistance Available Drain Current Pulsed Drain Current Power Dissipation DC Gate-Source Voltage Operating Temperature Storage Temperature 1200 V 0.15 24 A 34 A 70 W -15 to +3 V -55 to +200 °C -55 to +225 °C THERMAL PROPERTIES Symbols RθJC Parameters Thermal Resistance, Junction To Case, TC = 25°C Min. Typ. 1.8 Max. 2.5 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8965 Issue 2 Page 1 of 1 Website: http://www.semelab-tt.com NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols BVDSS IDSS VGS(th) IGSS Parameters Drain-Source Blocking Voltage Drain-Source Leakage Current Gate Threshold Voltage Gate-Source Leakage Current Test Conditions VGS = 0V, ID = 1.0mA VDS = 1200V, VGS = 0V VDS = 1200V, VGS = -5V VDS = 1.0V, ID = 34mA Min. 1200 0.70 - Typ. 0.11 1.00 0.25 0.1 0.09 0.29 28 9.3 20 30 70 642 69 68 Max. 1.0 Units V mA 1.25 1.5 mA 1.5 0.15 nC pF ns V VGS = 2.4V VGS = -15V ID = 13A, VGS = 3V, TJ = 25°C ID = 13A, VGS = 3V, TJ = 175°C VDS = 600V, ID = 13A, VGS = 0V to +3V VDS = 600V, ID = 13A, CBP = 33nF, RCL = 110 RDS(on) Qg Qgs ton toff tr Ciss Coss Crss (1) Drain-Source On-resistance Total Gate Charge Gate-Source Charge Turn-on Delay (Resistive Load) Turn-off Delay (Resistive Load) Rise time (Resistive Load) Input Capacitance Output Capacitance Reverse Transfer Capacitance - VDS = 100V - Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8965 Issue 2 Page 2 of 2 NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF MECHANICAL DATA Dimensions in mm (inches) TO258 (TO-258AA) Pin 1 – Gate Pin 2 - Source Pin 3 – Drain S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8965 Issue 2 Page 3 of 3