SML10SIC06Y

SILICON CARBIDE (SiC) SCHOTTKY DIODE SML10SIC06Y • • • • • Hermetic Metal TO-257AA Package. Semelab’s Silicon Carbide (SiC) Schottky diodes exhibit low forward voltage and superb high temperature performance. Suitable for high-frequency hard switching applications, where system efficiency and reliability are paramount. No reverse recovery time due to absence of minority carrier injection. Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VR VRRM IF IFRM IFSM PD TJ Tstg DC Reverse Voltage Repetitive Peak Reverse Voltage DC Forward Current (TJ = 175°C) Repetitive Peak Forward Current Surge Peak Forward Current Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range (2) (1) 600V 600V 10A 67A 250A 100W 0.5W/°C -55 to +225°C -55 to +225°C THERMAL PROPERTIES Symbols RθJC Notes Notes Parameters Thermal Resistance, Junction To Case Max. 2.0 Units °C/W (1) (1) T = 25°C, T = 10ms, Half Sine Wave, D = 0.3 (2) (2) T = 25°C, T = 10µs c c p p Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 9181 Issue 1 Page 1 of 2 Website: http://www.semelab-tt.com SILICON CARBIDE (SiC) SCHOTTKY DIODE SML10SIC06Y ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Static Characteristics Symbols VF IR Parameters Forward Voltage Reverse Current Test Conditions IF = 10A TJ = 175°C VR = 600V TJ = 175°C Min. Typ. 1.5 2.0 10 20 Max. 1.8 2.4 50 200 Units V µA Dynamic Characteristics Qc Total Capacitive Charge VR = 600V, IF = 10A δi/δt = 500A/µs VR = 1.0V, f = 1.0MHz VR = 200V, f = 1.0MHz VR = 400V, f = 1.0MHz 25 480 50 42 pF nC C Total Capacitance MECHANICAL DATA Dimensions in mm (inches) 10.41 (0.410) 10.67 (0.420) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 16.38 (0.645) 16.89 (0.665) 13.38 (0.527) 13.64 (0.537) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 1 2 3 12.07 (0.500) 19.05 (0.750) 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC 3.05 (0.120) BSC case 1 2 3 TO-257AA Pin 1 – Cathode Pin 2 – Cathode Pin 3 – Anode Case - Cathode S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9181 Issue 1 Page 2 of 2