SML11GB15U2C

SML11GB15U2C MECHANICAL DATA Dimensions in mm (inches) 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .6 0 (0 .1 4 2 ) M ax. 1 3 2 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1) 9) 6) 4) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) COMMON CATHODE SCHOTTKY DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 0 .7 6 (0 .0 3 0 ) m in . 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) PACKAGE SMD1 (TO-276AB) Underside View PAD 1 — Anode1 PAD 2 — Cathode PAD 3 — Anode 2 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VRRM IFAV IFSM Repetitive Peak Reverse Voltage Average Forward Current TC = 25°C TC = 90°C Maximum source forward current Tvj = 45 °C; tp = 10ms (50Hz), sine Virtual Junction Temperature Storage Temperature Range TC = 25°C Thermal Characteristics 150V 15A 11A 20A -55 + 175°C -55 + 175°C 60W 2°C/W Tvj Tstg Ptot Rthjc ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter IR* VF* CJ Reverse Current Forward Voltage Capacitance 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) Test Conditions TVJ = 25°C TVJ = 125°C IF = 5A IF = 5A VR = 100V VR = VRRM VR = VRRM TVJ = 125°C TVJ = 25°C TVJ = 125°C Min. Typ. 1.3 Max. 1.3 Unit mA V PF 0.8 0.8 22 1.1 Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 2851 Issue 2 SML11GB15U2C FIG. 1 TYP. FORWARD CHARCTERISTICS FIG. 2 TYP. JUNCTION CAPACITY VERSUS BLOCKING VOLTAGE NOTE: Explanatory comparison for the basic operational behaviour of rectifier diodes and Gallium Arsenide Schottky diodes. Rectifier Diode Conduction forward characteristics turn off characteristics by majority + minority carriers VF (IF) extraction of excess carriers causes temperature dependant reverse recovery (trr, IRM, Qrr) delayed saturation leads to VFR GaAs Schottky Didoe by majority carriers only VF(IF), See Fig 1 reverse current charges junction capacity Cj, see Fig 2; not temperature dependant no turn on overvoltage peak. turn on characteristics Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 2851 Issue 2