SML150FB12

SML150FB12 Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation Maximum rated values/Electrical Properties Collector-emitter Voltage DC Collector Current Repetitive peak Collector Current Total PowerDissipation Tc=70C, Tvj=175C Tc=25C,Tvj=175C tp=1msec,Tc=80C Tc=25C Vce 1200 150 200 300 850 V A A W Ic, nom Ic Icrm Ptot Gate-emitter peak voltage DC Forward Diode Current Repetitive Peak Forward Current I2t value per diode tp=1msec Vr=0V, tp=10msec, Tvj=125C RMS, 50Hz, t=1min Vges If Ifrm +/-20 150 300 V A A I2t Visol 4600 2500 A2sec V Isolation test voltage Collector-emitter saturation voltage Gate Threshold voltage Input capacitance Reverse transfer Capacitance Collector emitter cut off current Gate emitter cut off current Ic=150A,Vge=15V, Tc=25C Ic=150A,Vge=15V,Tc=125C Ic=6.4mA,Vce=Vge, Tvj=25C f=1MHz,Tvj=25C,Vce=25V, Vge=0V f=1MHz,Tvj=25C,Vce=25V, Vge=0V Vce=600V,Vge=0V,Tvj=25C Vce=600V,Vge=0V,Tvj=125C Vce=0V,Vge=20V,Tvj=25C Vce(sat) 1.70 2.0 5.0 5.8 10.5 0.5 1 1 2.15 V V V nF nF Vge(th) Cies Cres Ices Iges 6.5 5 400 mA mA nA Turn on delay time Ic=150A, Vcc=600V Vge=+/15V,Rg=8.2Ω,Tvj=25C Vge=+/-15V,Rg=8.2Ω,Tvj=125C Ic=150A, Vcc=600V Vge=+/-15V,Rg=8.2Ω,Tvj=25C Vge=+/-15V,Rg=8.2Ω,Tvj=125C Ic=150A, Vcc=600V Vge=+/-15V,Rg=8.2Ω,Tvj=25C Vge=+/-15V,Rg=8.2Ω,Tvj=125C Ic=150A, Vcc=600V Vge=+/-15V,Rg=8.2Ω,Tvj=25C Vge=+/-15V,Rg=8.2Ω,Tvj=125C Ic=150A,Vce=600V,Vge=15V Rge=8.2Ω,L=80nH Tvj=125C td,on 250 300 nsec nsec Rise time tr 90 100 nsec nsec Turn off delay time td,off 550 650 nsec nsec Fall time tf 130 160 11 nsec nsec mJ Turn energy loss per pulse Eon Turn off energy loss per pulse Ic=150A,Vce=600V,Vge=15V Rge=8.2Ω,L=80nH Tvj=125C SC Data tp≤10µsec, Vge≤15V Vcc=900V, Vce(max)=Vces-Lσdi/dt Tvj=125C Eoff Isc Lσce Rc 24 600 40 1.2 mJ A nH mΩ Stray Module inductance Terminal-chip resistance Diode characteristics Forward voltage Ic=150A,Vge=0V, Tc=25C Ic=150A,Vge=0V, Tc=125C Vf 1.65 1.65 110 140 15 28 7.0 14 2.1 V V A A µC µC mJ mJ Peak reverse recovery current If=150A, -di/dt=1500A/µsec Vce=600V,Vge=-15V,Tvj=25C Vce=600V,Vge=-15V,Tvj=125C Recovered charge If=150A, -di/dt=1500A/µsec Vce=600V,Vge=-15V,Tvj=25C Vce=600V,Vge=-15V,Tvj=125C If=150A, -di/dt=1500A/µsec Vce=600V,Vge=-10V,Tvj=25C Vce=600V,Vge=-10V,Tvj=125C Irm Qr Reverse recovery energy Erec Thermal Properties Thermal resistance junction to case Thermal resistance case to heatsink Maximum junction temperature Maximum operating temperature Igbt Diode RθJ-C Min Typ Max 0.15 0.26 K/W RθC-hs 0.03 K/W Tvj Top -55 175 175 C C Storage Temperature Tstg -55 175 C CIRCUIT DIAGRAM