SML200HB12

SML200HB12 Attributes: -Aerospace build standard -High reliability -Lightweight -Metal matrix base plate -AlN isolation -Trench gate igbts Maximum rated values/Electrical Properties Collector-emitter Voltage DC Collector Current Repetitive peak Collector Current Tc=70C, Tvj=175C Tc=25C,Tvj=175C tp=1msec,Tc=80C Vce Ic, nom Ic Icrm 1200 200 295 400 V A A Total Power Dissipation Tc=25C Ptot 2380 W Gate-emitter peak voltage DC Forward Diode Current Repetitive Peak Forward Current I2t value per diode tp=1msec Vr=0V, tp=10msec, Tvj=125C RMS, 50Hz, t=1min Ic=200A,Vge=15V, Tc=25C Ic=200A,Vge=15V,Tc=125C Ic=8mA,Vce=Vge, Tvj=25C f=1MHz,Tvj=25C,Vce=25V, Vge=0V f=1MHz,Tvj=25C,Vce=25V, Vge=0V Vce=1200V,Vge=0V,Tvj=25C Vce=0V,Vge=20V,Tvj=25C Vges If Ifrm +/-20 200 400 V A A I2t Visol 7800 2500 1.7 2.0 5.0 5.8 14 0.5 1 5 400 2.15 A2sec V V Isolation voltage Collector-emitter saturation voltage Gate Threshold voltage Input capacitance Reverse transfer Capacitance Collector emitter cut off current Gate emitter cut off current Vce(sat) Vge(th) Cies Cres Ices Iges 6.5 V nF nF mA nA Turn on delay time Ic=200A, Vcc=600V Vge=+/15V,Rg=3.6Ω,Tvj=25C Vge=+/-15V,Rg=3.6Ω,Tvj=125C Ic=200A, Vcc=600V Vge=+/-15V,Rg=3.6Ω,Tvj=25C Vge=+/-15V,Rg=3.6Ω,Tvj=125C Ic=200A, Vcc=600V Vge=+/-15V,Rg=3.6Ω,Tvj=25C Vge=+/-15V,Rg=3.6Ω,Tvj=125C Ic=200A, Vcc=600V Vge=+/-15V,Rg=3.6Ω,Tvj=25C Vge=+/-15V,Rg=3.6Ω,Tvj=125C td,on 250 300 nsec nsec nsec nsec nsec nsec nsec nsec nsec nsec nsec nsec mJ mJ Rise time tr 90 100 Turn off delay time td,off 550 650 Fall time tf 130 180 Turn on energy loss per pulse Ic=200A,Vce=600V,Vge=+/-15V Rge=3.6Ω,L=30nH Tvj=25C di/dt=6000A/µsec Tvj=125C Turn off energy loss per pulse Ic=200A,Vce=600V,Vge=+/-15V Rge=3.6Ω,L=30nH Tvj=25C di/dt=4000A/µsec Tvj=125C SC Data Stray Module inductance Terminal-chip resistance tp≤10µsec, Vge≤15V Vcc=900V, Vce(max)=Vces-Lσdi/dt Tvj=125C Eon 15 Eoff 35.0 800 20 0.7 mJ mJ A nH mΩ Isc Lσce Rc Diode characteristics Forward voltage Ic=200A,Vge=0V, Tc=25C Ic=200A,Vge=0V, Tc=125C Vf 1.65 2.15 1.65 V V Peak reverse recovery current If=200A, -di/dt=2000A/µsec Vce=600V,Vge=-15V,Tvj=25C Vce=600V,Vge=-15V,Tvj=125C Recovered charge If=200A, -di/dt=2000A/µsec Vce=600V,Vge=-15V,Tvj=25C Vce=600V,Vge=-15V,Tvj=125C If=200A, -di/dt=2000A/µsec Vce=600V,Vge=-15V,Tvj=25C Vce=600V,Vge=-15V,Tvj=125C Irm 150 190 A A Qr 20 36 µC µC Reverse recovery energy Erec 9 17 mJ mJ Thermal Properties Thermal resistance junction to case Thermal resistance case to heatsink Maximum junction temperature Maximum operating temperature Storage Temperature Igbt Diode RθJ-C Min Typ Max 0.063 0.11 K/W RθC-hs Tvj Top Tstg -55 -55 0.03 175 175 175 K/W C C C CIRCUIT DIAGRAM