SML2308CSM4

SML2308CSM4 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL ENHANCEMENT MODE MOSFET 1.40 ± 0.15 (0.055 ± 0.006) 0.25 ± 0.03 (0.01 ± 0.001) 5.59 ± 0.13 (0.22 ± 0.005) FEATURES • BVDSS =60V • ID = 2A 0.23 min. (0.009) 0.64 ± 0.08 (0.025 ± 0.003) 0.23 rad. (0.009) 3 2 1.27 ± 0.05 (0.05 ± 0.002) 3.81 ± 0.13 (0.15 ± 0.005) 4 1 • RDS(ON) = 0.16Ω • Hermetic Surface Mount Package • Screening Option Available 1.02 ± 0.20 (0.04 ± 0.008) 2.03 ± 0.20 (0.08 ± 0.008) LCC3 PACKAGE (MO-041BA) Underside View PAD 1 - Drain PAD 2 - N/C PAD 3 - Source PAD 4 - Gate The SML2308CSM4 is a very low on state resistance N-Channel enhancement mode mosfet in a Ceramic Surface Mount package designed for high rel applications: ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VDS VGS ID IDM PD RθJA TSTG , TJ NOTE: 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @TA = 25°C @TA = 25°C @TA = 100°C Thermal Resistance Junction to Ambient Maximum Junction and Storage Temperature Range 60V ±20V 2A 10A 0.8W 0.32W 156°C/W -55 to +150°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5331 Issue 1 SML2308CSM4 ELECTRICAL RATINGS (TA = 25°C unless otherwise stated) Characteristic STATIC CHARACTERISTICS V(BR)DSS Drain – Source Breakdown Voltage VGS(TH) IGSS IDSS ID(ON) RDS(ON) gfs V Gate Threshold Voltage Gate – Source Leakage Current Zero Gate Voltage Drain Current On State Drain Current 1 Drain Source On-State Resistance 1 Forward Transconductance 1 Diode Forward Voltage1 DYNAMIC CHARACTERISTICS Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Input capacitance Output capacitance Reverse transfer capacitance SWITCHING CHARACTERISTICS Turn–on Delay Time Rise Time Turn–off Delay Time Fall Time VGS = 10V VDS = 30V ID = 2.0A VGS = 0V VDS = 25V f = 1MHz VDD = 30V ID = 1A VGEN = 4.5V RL = 30Ω RG = 6Ω 4.8 0.8 1.0 240 50 15 7 10 17 6 15 20 35 15 ns pF 10 nc Test Conditions VGS = 0V VDS = VGS VGS = ±20V VDS = 60V VDS = ≥4.5V VDS = ≥4.5V VGS = 10V VGS = 4.5V VDS = 4.5V VGS = 0V ID = 250µA ID = 250µA VGS = 0V VGS = 0V TJ = 55°C VGS = 10V VGS = 4.5V ID = 2.0A ID = 1.7A ID = 2.0A IS = 1.0A 6 4 0.15 0.20 4.6 0.77 1.2 0.2 0.25 Min. 60 1.5 Typ. Max. Unit V ±100 0.5 10 nA µA A Ω S V SD NOTES: 1) Pulse Test: Pulse Width = 300µs , Duty Cycle ≤ 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5331 Issue 1