SML300HB06

SML300HB06 Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation -trench gate igbts Maximum rated values/ Electrical Properties Collector-emitter Voltage DC Collector Current Repetitive peak Collector Current Tc=70C, Tvj=175C Tc=25C,Tvj=175C tp=1msec,Tc=80C Vce 600 300 400 600 V A A Ic, nom Ic Icrm Ptot Total Power Dissipation Tc=25C 1250 W Gate-emitter peak voltage DC Forward Diode Current Repetitive Peak Forward Current I2t value per diode tp=1msec Vr=0V, tp=10msec, Tvj=125C Tvj=150C RMS, 50Hz, t=1min Vges If Ifrm +/-20 300 600 V A A I2t Visol 8400 7900 2500 A2sec V Isolation voltage Collector-emitter saturation voltage Gate Threshold voltage Input capacitance Reverse transfer Capacitance Collector emitter cut off current Gate emitter cut off current Ic=300A,Vge=15V, Tc=25C Ic=300A,Vge=15V,Tc=125C Ic=300A,Vge=15V,Tc=150C Ic=4.8mA,Vce=Vge, Tvj=25C f=1MHz,Tvj=25C,Vce=25V, Vge=0V f=1MHz,Tvj=25C,Vce=25V, Vge=0V Vce=600V,Vge=0V,Tvj=25C Vce=600V,Vge=0V,Tvj=125C Vce=0V,Vge=20V,Tvj=25C Vce(sat) Vge(th) Cies Cres Ices Iges 4.9 1.45 1.6 1.7 5.8 19 0.57 1 1 1.9 V 6.5 V nF nF 5 400 mA mA nA Turn on delay time Ic=300A, Vcc=300V Vge=+/15V,Rg=2.4Ω,Tvj=25C Vge=+/-15V,Rg=2.4Ω,Tvj=125C Vge=+/-15V,Rg=2.4Ω,Tvj=150C Ic=300A, Vcc=300V Vge=+/-15V,Rg=2.4Ω,Tvj=25C Vge=+/-15V,Rg=2.4Ω,Tvj=125C Vge=+/-15V,Rg=2.4Ω,Tvj=150C Ic=300A, Vcc=300V Vge=+/-15V,Rg=2.4Ω,Tvj=25C Vge=+/-15V,Rg=2.4Ω,Tvj=125C Vge=+/-15V,Rg=2.4Ω,Tvj=150C Ic=300A, Vcc=300V Vge=+/-15V,Rg=2.4Ω,Tvj=25C Vge=+/-15V,Rg=2.4Ω,Tvj=125C Vge=+/-15V,Rg=2.4Ω,Tvj=150C td,on 110 120 130 50 60 60 490 520 530 50 70 70 3.1 3.3 nsec nsec nsec nsec nsec nsec nsec nsec nsec nsec nsec nsec mJ mJ Rise time tr Turn off delay time td,off Fall time tf Turn on energy loss per pulse Ic=300A,Vce=300V,Vge=+/-15V Rge=2.4Ω,L=30nH Tvj=125C di/dt=6500A/µsec Tvj=150C Turn off energy loss per pulse Ic=300A,Vce=300V,Vge=+/-15V Rge=2.4Ω,L=30nH Tvj=125C di/dt=6500A/µsec Tvj=150C SC Data tp≤10µsec, Vge≤15V Vcc=360V, Tvj=25C Vce(max)=Vces-Lσdi/dt Tvj=150C Eon Eoff 15 15.5 2100 1500 40 1.2 mJ mJ A A nH mΩ Isc Lσce Rc Stray Module inductance Terminal-chip resistance Diode characteristics Forward voltage Ic=300A,Vge=0V, Tc=25C Ic=300A,Vge=0V, Tc=125C Ic=300A,Vge=0V, Tc=150C Vf 1.55 1.95 1.5 1.45 190 235 250 13 24 28 3.4 6.2 7.0 V V V A A A µC µC µC mJ mJ mJ Peak reverse recovery current If=300A, -di/dt=6500A/µsec Vce=300V,Vge=-15V,Tvj=25C Vce=300V,Vge=-15V,Tvj=125C Vce=300V,Vge=-15V,Tvj=150C Recovered charge If=300A, -di/dt=6500A/µsec Vce=300V,Vge=-15V,Tvj=25C Vce=300V,Vge=-15V,Tvj=125C Vce=300V,Vge=-15V,Tvj=150C If=300A, -di/dt=6500A/µsec Vce=300V,Vge=-15V,Tvj=25C Vce=300V,Vge=-15V,Tvj=125C Vce=300V,Vge=-15V,Tvj=150C Irm Qr Reverse recovery energy Erec Thermal Properties Thermal resistance junction to case Thermal resistance case to heatsink Maximum junction temperature Maximum operating temperature Storage Temperature Igbt Diode RθJ-C Min Typ Max 0.12 0.16 K/W RθC-hs Tvj Top Tstg -55 -55 0.03 175 175 175 K/W C C C CIRCUIT DIAGRAM