SML300HB12GG

SML300HB12GG Attributes: -Aerospace build standard -High reliability -Lightweight -Cu and metal matrix base plate versions (pin finned versions available) -AlN isolation -Trench gate igbts Maximum rated values/Electrical Properties Collector-emitter voltage DC collector current Repetitive peak collector current Total power dissipation Tc=70C, Tvj=175C Tc=25C,Tvj=175C tp=1msec,Tc=80C Tc=25C Vce 1200 320 455 600 850 V A A W Ic, nom Ic Icrm Ptot Gate-emitter peak voltage DC forward diode current Repetitive peak forward current I2t value per diode tp=1msec Vr=0V, tp=10msec, Tvj=125C Tvj=150C RMS, 50Hz, t=1min Ic=300A,Vge=15V, Tc=25C Ic=300A,Vge=15V,Tc=125C Ic=300A,Vge=15V,Tc=150C Ic=6.4mA,Vce=Vge, Tvj=25C f=1MHz,Tvj=25C,Vce=25V, Vge=0V f=1MHz,Tvj=25C,Vce=25V, Vge=0V Vce=1200V,Vge=0V,Tvj=25C Vce=1200,Vge=0V,Tvj=125C Vce=0V,Vge=20V,Tvj=25C Vges If Ifrm +/-20 400 800 V A A I2t Visol Vce(sat) 11000 10500 2500 1.7 2.0 5.0 5.8 21.5 0.98 A2sec V 2.15 2.45 6.5 V Isolation test voltage Collector-emitter saturation voltage Gate threshold voltage Input capacitance Reverse transfer capacitance Collector emitter cut off current Gate emitter cut off current Vge(th) Cies Cres Ices Iges V nF nF 0.3 400 mA mA nA Turn on delay time Ic=300A, Vcc=600V Vge=+/-15V,Rg=2Ω,Tvj=125C Ic=300A, Vcc=600V Vge=+/-15V,Rg=2Ω,Tvj=125C Ic=300A, Vcc=600V Vge=+/-15V,Rg=2Ω,Tvj=125C Ic=300A, Vcc=600V Vge=+/-15V,Rg=2Ω, Tvj=125C td,on 280 nsec Rise time tr 65 nsec Turn off delay time td,off 630 nsec Fall time tf 130 nsec Turn on energy loss per pulse Ic=300A,Vce=600V,Vge=15V Rge=2Ω,L=30nH Tvj=125C Turn off energy loss per pulse Ic=300A,Vce=600V,Vge=15V Rge=2Ω,L=30nH Tvj=125C SC Data tp≤10µsec, Vge≤15V Vcc=360V, Tvj=25C Vce(max)=Vces-Lσdi/dt Tvj=150C Eon 35 mJ Eoff Isc Lσce Rc 45 2800 2000 18 1.0 mJ A A nH mΩ Stray Module inductance Terminal-chip resistance Diode characteristics Forward voltage Ic=300A,Vge=0V, Tc=25C Ic=300A,Vge=0V, Tc=125C Vf 1.6 1.6 1.8 V 1.8 V Peak reverse recovery current If=300A, -di/dt=6200A/µsec Vce=300V,Vge=-10V,Tvj=125C Recovered charge If=300A, -di/dt=6200A/µsec Vce=600V,Vge=-10V,Tvj=125C If=300A, -di/dt=6200A/µsec Vce=600V,Vge=-10V,Tvj=125C Irm 375 A Qr 75 µC Reverse recovery energy Erec 33 mJ Thermal Properties Thermal resistance junction to case (MMC) Thermal resistance case to heatsink Maximum junction temperature Maximum operating temperature Igbt Diode RθJ-C Min Typ Max 0.042 0.1 K/W RθC-hs 0.045 K/W Tvj Top -55 175 175 C C Storage Temperature Tstg -55 175 C GAL GAR CIRCUIT DIAGRAM