SML400HB01MF

SML400HB01MF Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation -Mosfet module Maximum rated values/Electrical Properties Source-drain voltage VDSS DC Collector Current ID25 Repetitive peak Drain Current Total Power Dissipation Tj=25C to 175C Rgs=1MΩ Tc=25C Tc=25C,Tvj=175C tp=1msec,Tc=80C Tc=25C VDSS Ic, nom Ic Icrm Ptot 100 400 400 600 1700 V A A W Gate-emitter peak voltage Repetitive Peak Forward Current Isolation voltage Continuous Transient tp=1msec RMS, 50Hz, t=1min VGS Ifrm Visol MIN TYP +/-20 =/-30 600 2500 MAX V V A V Drain-source breakdown voltage Gate Threshold voltage ID=250µA,VGS=0V, Tc=25C ID=8mA,VDS=VGS, Tvj=25C BVDSS 100 V Vge(th) 3.0 15200 5800 1720 470 100 270 1 5 V pF pF pF nC nC nC f=1MHz,Tvj=25C,Vgs=0V,VDS=0V Tvj=25C,VDS=0.5VDSS,ID=0.5ID25,VGS=10V Gate-source leakage current Drain source leakage current VGS=+/-20V, VGS=0V,Tvj=25C VDS=VGS=20V, Tvj=25C Tvj=150C Tvj=175C IGSS +/-200 nA IDSS 25 1 5 µA mA mA gfs Vgs=10V, ID=0.5ID25 Ic=120A,VDS=0.5VDSS,VGS=10 V Rge=3.3Ω,L=30nH Tvj=25C 60 97 50 60 150 90 S ns ns Ns ns Stray Module inductance Terminal-chip resistance Lσce Rc 30 1.0 nH mΩ Source –Drain Diode characteristics DC Forward Diode Current Is Repetitive forward current TYP MAX Tc=25C VGS=0V Is Ism 400 800 A A IF=IS, VGS=0V tP=300µsec, duty cycle=2% Peak reverse recovery current If=50A, -di/dt=100A/µsec VR=50V,Vgs=0V,Tvj=25C Reverse recovery time If=50A, -di/dt=100A/µsec Vr=50V,Vgs=0V,Tvj=25C Recovered charge If=50A, -di/dt=100A/µsec Vr=50V,Vgs=0V,Tvj=25C VSD 1.5 V Irm 12 A trr 300 ns Qrm 0.8 µC Thermal Properties Thermal resistance junction to case Thermal resistance case to heatsink Maximum junction temperature Maximum operating temperature Storage Temperature Igbt Diode RθJ-C RθC-hs Tvj Top Tstg Min Typ Max 0.09 0.11 K/W 0.03 175 -55 -55 175 175 K/W C C C 400 300 200 100 0 300 150 400 200 0 160A 600 700A 20 200nF CIRCUIT DIAGRAM