SML400HB06

SML400HB06 Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation Maximum rated values/ Electrical Properties Collector-emitter Voltage DC Collector Current Repetitive peak Collector Current Total PowerDissipation Tc=70C, Tvj=175C Tc=25C,Tvj=175c tp=1msec,Tc=80C Tc=25C Vce 600 400 500 800 850 V A A W Ic, nom Ic Icrm Ptot Gate-emitter peak voltage DC Forward Diode Current Repetitive Peak Forward Current I2t value per diode tp=1msec Vr=0V, tp=10msec, Tvj=125C Tvj=150C RMS, 50Hz, t=1min Vges If Ifrm +/-20 400 800 V A A I2t Visol 11000 10500 2500 A2sec V Isolation test voltage Collector-emitter saturation voltage Gate Threshold voltage Input capacitance Reverse transfer Capacitance Collector emitter cut off current Gate emitter cut off current Ic=400A,Vge=15V, Tc=25C Ic=400A,Vge=15V,Tc=125C Ic=400A,Vge=15V,Tc=150C Ic=6.4mA,Vce=Vge, Tvj=25C f=1MHz,Tvj=25C,Vce=25V, Vge=0V f=1MHz,Tvj=25C,Vce=25V, Vge=0V Vce=600V,Vge=0V,Tvj=25C Vce=600V,Vge=0V,Tvj=125C Vce=0V,Vge=20V,Tvj=25C Vce(sat) 1.55 1.6 1.7 4.9 5.8 26 0.76 1 1 1.9 V Vge(th) Cies Cres Ices Iges 6.5 V nF nF 5 400 mA mA nA Turn on delay time Ic=400A, Vcc=300V Vge=+/15V,Rg=1.5Ω,Tvj=25C Vge=+/-15V,Rg=1.5Ω,Tvj=125C Vge=+/-15V,Rg=1.5Ω,Tvj=150C Ic=400A, Vcc=300V Vge=+/-15V,Rg=1.5Ω,Tvj=25C Vge=+/-15V,Rg=1.5Ω,Tvj=125C Vge=+/-15V,Rg=1.5Ω,Tvj=150C Ic=400A, Vcc=300V Vge=+/-15V,Rg=1.5Ω,Tvj=25C Vge=+/-15V,Rg=1.5Ω,Tvj=125C Vge=+/-15V,Rg=1.5Ω,Tvj=150C Ic=400A, Vcc=300V Vge=+/-15V,Rg=1.5Ω,Tvj=25C Vge=+/-15V,Rg=1.5Ω,Tvj=125C Vge=+/-15V,Rg=1.5Ω,Tvj=150C Ic=400A,Vce=300V,Vge=15V Rge=1.5Ω,L=30nH Tvj=125C Tvj=150C td,on 110 120 130 50 60 60 490 520 530 50 70 70 3.2 3.4 nsec nsec nsec nsec nsec nsec nsec nsec nsec nsec nsec nsec mJ mJ Rise time tr Turn off delay time td,off Fall time tf Turn energy loss per pulse Eon Turn off energy loss per pulse SC Data Ic=400A,Vce=300V,Vge=15V Rge=1.5Ω,L=30nH Tvj=125C Tvj=150C tp≤10µsec, Vge≤15V Vcc=360V, Tvj=25C Vce(max)=Vces-Lσdi/dt Tvj=150C Eoff 15 15.5 2800 2000 40 1.2 mJ mJ A A nH mΩ Isc Lσce Rc Stray Module inductance Terminal-chip resistance Diode characteristics Forward voltage Ic=400A,Vge=0V, Tc=25C Ic=400A,Vge=0V, Tc=125C Ic=400A,Vge=0V, Tc=150C Vf 1.55 1.5 1.4 270 330 350 15 29 32 3.6 7.4 8.3 1.9 V V V A A A µC µC µC mJ mJ mJ Peak reverse recovery current If=400A, -di/dt=7000A/µsec Vce=300V,Vge=-10V,Tvj=25C Vce=300V,Vge=-10V,Tvj=125C Vce=300V,Vge=-10V,Tvj=150C Recovered charge If=400A, -di/dt=7000A/µsec Vce=600V,Vge=-10V,Tvj=25C Vce=600V,Vge=-10V,Tvj=125C Vce=600V,Vge=-10V,Tvj=150C If=400A, -di/dt=7000A/µsec Vce=600V,Vge=-10V,Tvj=25C Vce=600V,Vge=-10V,Tvj=125C Vce=600V,Vge=-10V,Tvj=150C Irm Qr Reverse recovery energy Erec Thermal Properties Thermal resistance junction to case Thermal resistance case to heatsink Maximum junction temperature Maximum operating temperature Igbt Diode RθJ-C Min Typ Max 0.09 0.1 K/W RθC-hs 0.03 K/W Tvj Top -55 175 175 C C Storage Temperature Tstg -55 175 C CIRCUIT DIAGRAM