SML50A21_07

SML50A21 TO–3 Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) VDSS 500V ID(cont) 21A RDS(on) 0.220Ω • Faster Switching • Lower Leakage • TO–3 Hermetic Package StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. 38.61 (1.52) 39.12 (1.54) 1.47 (0.058) 1.60 (0.063) 29.9 (1.177) 30.4 (1.197) Pin 1 – Gate 16.64 (0.655) 17.15 (0.675) Pin 2 – Source Case – Drain D G S ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 2 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 5.90mH, RG = 25Ω, Peak IL = 21A Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. 22.23 (0.875) max. 500 21 84 ±30 ±40 235 1.88 –55 to 150 300 21 30 1300 V A A V W W/°C °C A mJ Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5963 Issue 1 SML50A21 STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) BVDSS IDSS IGSS VGS(TH) ID(ON) RDS(ON) Characteristic Drain – Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0V) Gate – Source Leakage Current Gate Threshold Voltage On State Drain Current 2 Drain – Source On State Resistance 2 Test Conditions VGS = 0V , ID = 250μA VDS = VDSS VDS = 0.8VDSS , TC = 125°C VGS = ±30V , VDS = 0V VDS = VGS , ID = 1.0mA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] 2 21 0.220 Min. 500 Typ. Max. Unit V 25 250 ±100 4 μA nA V A Ω DYNAMIC CHARACTERISTICS Characteristic Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge3 Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C RG = 1.6Ω Min. Typ. 3700 510 200 150 25 70 12 10 50 8 Max. Unit 4440 715 300 225 37 105 25 20 75 15 ns nC pF SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed Source Current1 Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge Test Conditions (Body Diode) (Body Diode) VGS = 0V , IS = – ID [Cont.] IS = – ID [Cont.] , dls / dt = 100A/μs IS = – ID [Cont.] , dls / dt = 100A/μs 510 10 Min. Typ. Max. Unit 21 A 84 1.3 V ns μC THERMAL CHARACTERISTICS RθJC RθJA Characteristic Junction to Case Junction to Ambient 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380μS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Min. Typ. Max. Unit 0.53 °C/W 30 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5963 Issue 1