SML6609ASMD05

P-CHANNEL POWER MOSFET SML6609ASMD05 • • • • • Electrically Isolated and Hermetically Sealed Surface Mount Package Ultra Low On State Resistance Fast Switching Low Gate Charge Screening Options Available ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS VGS ID IDM PD TJ, Tstg Drain – Source Voltage Gate – Source Voltage Continuous Drain Current @ Tcase = 25°C Pulsed Drain Current1 Total Power Dissipation @ Tcase = 25°C Linear De-rating Factor @ Tcase ≥ 25°C Operating and Storage Temperature Range -30V ±20V -6.3A -40A 20W 0.45W/°C -55°C to +150°C THERMAL CHARACTERISTICS Symbol RθJC RθJPCB Notes: 1) Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Parameters Thermal Resistance, Junction To Case Thermal Resistance, Junction To PCB Max 1.8 6.25 Units °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8678 Issue 2 Page 1 of 3 Website: http://www.semelab-tt.com P-CHANNEL POWER MOSFET SML6609ASMD05 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Symbol BVDSS Parameters Drain-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-Source On-State Resistance Test Conditions VGS = 0 Reference to 25°C VGS = -10V ID = -250µA ID = -250µA ID = -7A Tj = 125°C VGS = -7.5V ID = -5.5A ID = -250µA ID = -250µA I D = -7A VDS = -24V Min -30 Typ Max Units V ∆BVDSS ∆T j 1 -0.022 0.04 0.54 0.06 -2.5 -0.004 14.5 -3.0 -100 100 V/°C RDS(on) VGS(th) Ω Gate Threshold Voltage Temperature Coefficient of Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Forward Gate-Source Leakage Reverse Gate-Source Leakage On-State Drain Current VDS = VGS Reference to 25°C VDS = -10V VGS = 0 VGS = -20V VGS = 20V VGS = -10V -4.5 V V/°C S(Ʊ) ∆VGS (th) ∆T j gfs 1 IDSS IGSS IGSS ID(on) µA nA VDS = -5V -20 A DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VGS = 0 VDS = -25V f = 1.0MHz VGS = -10V ID = -7.2A VDS = -15V VDD = -15V ID = -1.0A RG = 6Ω VGS = -10V 1975 315 160 46 19 11 20 28 39 27 ns nC pF SOURCE – DRAIN DIODE CHARACTERISTICS IS VSD 1 Continuous Source Current Diode Forward Voltage IS = -2.1A VGS = 0 -2.1 -1.2 A V S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8678 Issue 2 Page 2 of 3 P-CHANNEL POWER MOSFET SML6609ASMD05 MECHANICAL DATA Dimensions in mm (inches) 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 2.41 (0.095) 0.127 (0.005) 3.175 (0.125) Max. 3.05 (0.120) 1 3 10.16 (0.400) 0.76 (0.030) min. 5.72 (.225) 2 0.127 (0.005) 16 PLCS 0.50(0.020) 7.26 (0.286) 0.127 (0.005) 0.50 (0.020) max. SMD05 (TO-276AA) (Underside View) Pad 1 - Source Pad 2 – Drain Pad 3 - Gate S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8678 Issue 2 Page 3 of 3