SML75HB06

SML75HB06 Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation Maximum rated values/ Electrical Properties Collector-emitter Voltage DC Collector Current Repetitive peak Collector Current Total PowerDissipation Tc=75C Tc=25C tp=1msec,Tc=75C Tc=25C Vces 600 75 100 150 260 V A A W Ic, nom Ic Icrm Ptot Gate-emitter peak voltage DC Forward Diode Current Repetitive Peak Forward Current I2t value per diode tp=1msec Vr=0V, tp=10msec, Tvj=125C RMS, 50Hz, t=1min Vges If Ifrm +/-20 75 150 V A A I2t Visol 500 2500 A2sec V Isolation test voltage Collector-emitter saturation voltage Gate Threshold voltage Input capacitance Reverse transfer Capacitance Collector emitter cut off current Gate emitter cut off current Ic=75A,Vge=15V, Tc=25C Ic=75A,Vge=15V,Tc=125C Vce=Vge, Tvj=25C f=1MHz,Tvj=25C,Vce=25V, Vge=0V f=1MHz,Tvj=25C,Vce=25V, Vge=0V Vce=600V,Vge=0V,Tvj=25C Vce=600V,Vge=0V,Tvj=125C Vce=0V,Vge=20V,Tvj=25C Vce(sat) Vge(th) Cies Cres Ices Iges 4.5 1.95 2.2 5.5 3.2 0.3 1 1 2.45 6.5 V V nF nF 500 400 µA µA Turn on delay time Ic=75A, Vcc=300V Vge=+/15V,Rg=3Ω,Tvj=25C Vge=+/-15V,Rg=3Ω,Tvj=125C Ic=75A, Vcc=300V Vge=+/-15V,Rg=3Ω,Tvj=25C Vge=+/-15V,Rg=3Ω,Tvj=125C Ic=75A, Vcc=300V Vge=+/-15V,Rg=3Ω,Tvj=25C Vge=+/-15V,Rg=3Ω,Tvj=125C Ic=75A, Vcc=300V Vge=+/-15V,Rg=3Ω,Tvj=25C Vge=+/-15V,Rg=3Ω,Tvj=125C Ic=75A,Vce=300V,Vge=15V Rge=2.7Ω,Tvj=125C,L=35nH td,on 63 65 22 1025 155 170 20 35 0.7 2.4 340 40 1.2 nsec nsec nsec nsec nsec nsec nsec nsec mJ mJ Rise time tr Turn off delay time td,off Fall time tf Turn energy loss per pulse Eon Eoff Isc Lσce Rc Turn off energy loss per pulse Ic=75A,Vce=300V, Vge=15V Rge=Ω,Tvj=125C,L=30nH SC Data tp≤10µsec, Vge≤15V Tvj≤125C,Vcc=360V,Vce(max)Vces-Lσdi/dT A nH mΩ Stray Module inductance Terminal-chip resistance Diode characteristics Forward voltage Ic=75A,Vge=0V, Tc=25C Ic=75A,Vge=0V, Tc=125C Vf 1.25 1.6 V 1.2 95 115 5.1 7.9 . 2.3 A Peak reverse recovery current If=75A, -di/dt=3000A/µsec Vce=300V,Vge=-10V,Tvj=25C Vce=300V,Vge=-10V,Tvj=125C Recovered charge If=75A, -di/dt=3000A/µsec Vce=600V,Vge=-10V,Tvj=25C Vce=600V,Vge=-10V,Tvj=125C If=75A, -di/dt=3000A/µsec Vce=600V,Vge=-10V,Tvj=25C Vce=600V,Vge=-10V,Tvj=125C Irm Qr µC Reverse recovery energy Erec mJ mJ Thermal Properties Thermal resistance junction to case Thermal resistance case to heatsink Maximum junction temperature Maximum operating temperature Igbt Diode RθJ-C Min Typ Max 0.48 0.89 K/W RθC-hs 0.03 K/W Tvj Top -55 150 125 C C Storage Temperature Tstg -55 125 C CIRCUIT DIAGRAM