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SMP400G-CA

SMP400G-CA

  • 厂商:

    SEME-LAB

  • 封装:

  • 描述:

    SMP400G-CA - P.I.N. PHOTODIODE - Seme LAB

  • 详情介绍
  • 数据手册
  • 价格&库存
SMP400G-CA 数据手册
SMP400G-CA MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES • • • • • • • • • • • EXCELLENT LINEARITY LOW NOISE PHOTODIODE ISOLATED FROM PACKAGE WIDE SPECTRAL RESPONSE WIDE INTRINSIC BANDWIDTH WIDE VIEWING ANGLE LOW LEAKAGE CURRENT LOW CAPACITANCE INTEGRAL OPTICAL FILTER OPTION note 1 TO18 HERMETIC METAL CAN PACKAGE EMI SCREENING MESH AVAILABLE Ø 5.4 Ø 4.7 Ø 0.45 Lead 2.54 Case 3 2 1 13 nom. 3.6 Note 1 Contact Semelab Plc for filter options Anode Cathode 3 DESCRIPTION The SMP400G-CA contains a Silicon P.I.N. photodiode incorporated in a compact, low profile, hermetic metal can package. The electrical terminations are via three leads of diameter 0.008" on a pitch centre diameter of 0.1". The photodiode is electrically isolated from the package, which has a separate earth lead. The photodiode structure has been optimised for high sensitivity, high speed light measurement applications. The wide viewing angle provides relatively even reception over a large area. The metal can, isolated photodiode and optional screening mesh ensure a rugged device with a high degree of immunity to conducted and radiated electrical interference. 2 1 TO-18 Package Pin 1 – Anode Pin 2 – Cathode Pin 3 –Case ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Operating temperature range Storage temperature range Temperature coefficient of responsively Temperature coefficient of dark current Reverse breakdown voltage Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. -40°C to +70°C -45°C to +80°C 0.35% per °C x2 per 8°C rise 60V Prelim. 1/98 SMP400G-CA CHARACTERISTICS (Tamb=25°C unless otherwise stated) Characteristic Test Conditions. Responsively Active Area Dark Current Breakdown Voltage Capacitance E = 0 Dark E = 0 Dark E = 0 Dark E = 0 Dark E = 0 Dark 30V Reverse 50Ω 900nm Directional characteristics Min. 0.45 Typ. 0.55 0.62 Max. Units A/W mm2 λ at 900nm 1V Reverse 10V Reverse 10µA Reverse 0V Reverse 20V Reverse 60 0.1 0.5 80 8 1.5 4 7.2 1.0 2.5 nA V 12 2.5 pF Rise Time NEP ns 0.45 W/√Hz Directional Characteristics 1 80° 70° Angle from sensor to illumination 1 0.9 0.8 Normalised Incident Power 60° 0.8 50° 0.6 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 40° 30° 0.4 20° 0.2 10° 0 0 0.2 0.4 0.6 0.8 1 Normalised incident power 0 10 20 30 40 50 60 70 Angle from sensor to illumination 80 90 Spectral Response 100 Relative Responsivity (%) 80 60 40 20 0 0 200 400 600 Wavelength (nm) 800 1000 1200 Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/98
SMP400G-CA
物料型号: - 型号为SMP400G-CA。

器件简介: - SMP400G-CA包含一个硅P.I.N.光电二极管,封装在一个紧凑、低轮廓、密封的金属罐中。电气连接通过直径为0.008英寸的三个引脚实现,中心间距为0.1英寸。光电二极管在电气上与封装隔离,具有独立的接地引脚。

引脚分配: - Pin 1 – 阳极(Anode) - Pin 2 – 阴极(Cathode) - Pin 3 – 外壳(Case)

参数特性: - 响应度:在900nm波长下,最小0.45A/W,典型0.55A/W。 - 有效面积:0.62mm²。 - 暗电流:在1V反向电压下,最小0.1nA,最大1.0nA;在10V反向电压下,最小0.5nA,最大2.5nA。 - 反向击穿电压:在10A反向电流下,最小60V,最大80V。 - 电容:在0V反向电压下,最小8pF,最大12pF;在20V反向电压下,最小1.5pF,最大2.5pF。 - 上升时间:在30V反向电压下,最小4ns。 - 噪声等效功率(NEP):在900nm波长下,最小7.2×10^-11 W/Hz。

功能详解: - 该器件结构优化,适用于高灵敏度、高速光测量应用。宽视场角提供较大区域的相对均匀接收。金属罐、隔离的光电二极管和可选的屏蔽网确保设备坚固,对传导和辐射电磁干扰具有很高的免疫力。

应用信息: - 适用于高速光测量应用,特别是在需要高灵敏度和较宽视场角的场合。

封装信息: - 采用TO-18密封金属罐封装,具有EMI屏蔽网选项。
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