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SMP550G-EJ

SMP550G-EJ

  • 厂商:

    SEME-LAB

  • 封装:

  • 描述:

    SMP550G-EJ - P.I.N. PHOTODIODE - Seme LAB

  • 详情介绍
  • 数据手册
  • 价格&库存
SMP550G-EJ 数据手册
SMP550G-EJ MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES • • • • • • • • EXCELLENT LINEARITY LOW NOISE WIDE SPECTRAL RESPONSE LOW LEAKAGE CURRENT LOW CAPACITANCE INTEGRAL OPTICAL FILTER OPTION note 1 TO39 HERMETIC METAL CAN PACKAGE EMI SCREENING MESH AVAILABLE WINDOW Ø 5.9 ± 0.1 Ø 9.1 ± 0.2 Ø 8.1 ± 0.1 SENSITIVE SURFACE Ø 0. 4 5 L E AD 5 . 0 8 ± 0 .2 20 3.8 ± 0.2 Note 1 Contact Semelab Plc for filter options DESCRIPTION 2 1 The SMP550G-EJ is a Silicon P.I.N. photodiode incorporated in a hermetic metal can package. The electrical terminations are via two leads of diameter 0.018" on a pitch of 0.2". The can structure permits a wide range of optical filter options. The cathode of the photodiode is electrically connected to the package. The larger photodiode active area provides greater sensitivity than the SMP400 range of devices, with a corresponding reduction in speed. The photodiode structure has been optimised for high sensitivity, light measurement applications. The metal can and optional screening mesh ensure a rugged device with a high degree of immunity to radiated electrical interference. TO-39 Package Pin 1 – Anode Pin 2 – Cathode & Case ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Operating temperature range Storage temperature range Temperature coefficient of responsively Temperature coefficient of dark current Reverse breakdown voltage Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. -40°C to +70°C -45°C to +80°C 0.35% per °C x2 per 8°C rise 60V Prelim. 1/98 SMP550G-EJ CHARACTERISTICS (Tamb=25°C unless otherwise stated) Characteristic Test Conditions. Responsively Active Area Dark Current Breakdown Voltage Capacitance E = 0 Dark E = 0 Dark E = 0 Dark E = 0 Dark E = 0 Dark 30V Reverse 50Ω 900nm Directional characteristics Min. 0.45 Typ. 0.55 5.19 Max. Units A/W mm2 λ at 900nm 1V Reverse 10V Reverse 10µA Reverse 0V Reverse 20V Reverse 60 2 16 80 55 10 9 19x10-14 4 22 nA V pF Rise Time NEP ns W/√Hz Directional Characteristics 1 80° 70° Angle from sensor to illumination 1 0.9 0.8 Normalised Incident Power 60° 0.8 50° 0.6 0.7 0.6 0.5 0.4 0.3 0.2 40° 30° 0.4 20° 0.2 10° 0.1 0 0 0 0.2 0.4 0.6 0.8 1 Normalised incident power 0 10 20 30 40 50 60 70 80 90 Angle from sensor to illumination Spectral Response 100 Relative Responsivity (%) 80 60 40 20 0 0 200 400 600 Wavelength (nm) 800 1000 1200 Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/98
SMP550G-EJ
物料型号: - 型号为SMP550G-EJ。

器件简介: - SMP550G-EJ是一款硅P.I.N.光电二极管,封装在密封的金属罐中。该器件通过直径为0.018英寸、间距为0.2英寸的两个引脚进行电气连接。金属罐结构允许多种光学滤光片选项。

引脚分配: - Pin 1 – 阳极(Anode) - Pin 2 – 阴极和外壳(Cathode & Case)

参数特性: - 响应度(Responsivity):在900nm波长下,最小值为0.45 A/W,典型值为0.55 A/W。 - 光敏面积(Active Area):5.19 mm²。 - 暗电流(Dark Current):在0V反向偏压下,最小值为2 nA,典型值为4 nA;在10V反向偏压下,最小值为16 nA,典型值为22 nA。 - 反向击穿电压(Breakdown Voltage):在0V反向偏压下,最小值为60V,典型值为80V。 - 电容(Capacitance):在0V反向偏压下,典型值为55 pF;在20V反向偏压下,典型值为10 pF。 - 上升时间(Rise Time):在30V反向偏压下,最小值为9 ns。 - 噪声等效功率(NEP):在900nm波长下,典型值为19x10^-14 W/Hz。

功能详解: - SMP550G-EJ具有优异的线性度、低噪声、宽光谱响应、低漏电流和低电容。它还具有内置的光学滤光片选项和EMI屏蔽网,以提高对辐射电磁干扰的免疫力。

应用信息: - 该光电二极管结构优化用于高灵敏度的光测量应用。

封装信息: - 封装为TO-39,具有较大的光二极管活动区域,提供比SMP400系列设备更高的灵敏度,但速度相应降低。金属罐和可选的屏蔽网确保了设备的坚固性。
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