SMP550G-EK

SMP550G-EK MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES • • • • • • • • • EXCELLENT LINEARITY LOW NOISE WIDEST SPECTRAL RESPONSE · ENHANCED UV SENSITIVITY LOW LEAKAGE CURRENT LOW CAPACITANCE INTEGRAL OPTICAL FILTER OPTION note 1 TO39 HERMETIC METAL CAN PACKAGE EMI SCREENING MESH AVAILABLE WINDOW Ø 5.9 ± 0.1 Ø 9.1 ± 0.2 Ø 8.1 ± 0.1 SENSITIVE SURFACE Ø 0. 4 5 L E AD 5 . 0 8 ± 0 .2 20 3.8 ± 0.2 Note 1 Contact Semelab Plc for filter options DESCRIPTION 2 1 The SMP550G-EK is a Silicon P.I.N. photodiode incorporated in a hermetic metal can package. The package window has greater ultra-violet light transmission, thus extending the useful spectral range of the device. The electrical terminations are via two leads of diameter 0.018" on pitch of 0.2". The cathode of the photodiode is electrically connected to the package. The larger photodiode active area provides greater sensitivity than the SMP400 range of devices, with a corresponding reduction in speed. The photodiode structure has been optimised for high sensitivity, light measurement applications across the infra-red to ultraviolet spectrum. Inclusion of a suitable optical filter into the package can produce a device that responds only to ultraviolet light. The metal can and optional screening mesh ensure a rugged device with a high degree of immunity to radiated electrical interference. TO-39 Package Pin 1 – Anode Pin 2 – Cathode & Case ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Operating temperature range Storage temperature range Temperature coefficient of responsively Temperature coefficient of dark current Reverse breakdown voltage Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. -40°C to +70°C -45°C to +80°C 0.35% per °C x2 per 8°C rise 60V Prelim. 1/98 SMP550G-EK CHARACTERISTICS (Tamb=25°C unless otherwise stated) Characteristic Test Conditions. Responsively Active Area Dark Current Breakdown Voltage Capacitance E = 0 Dark E = 0 Dark E = 0 Dark E = 0 Dark E = 0 Dark 30V Reverse 50Ω 900nm Directional characteristics Min. 0.45 Typ. 0.55 5.19 Max. Units A/W mm2 λ at 900nm 1V Reverse 10V Reverse 10µA Reverse 0V Reverse 20V Reverse 60 2 16 80 55 10 9 19x10-14 4 22 nA V pF Rise Time NEP ns 0.45 W/√Hz Directional Characteristics 1 80° 70° Angle from sensor to illumination 1 0.9 0.8 Normalised Incident Power 60° 0.8 50° 0.6 0.7 0.6 0.5 0.4 0.3 0.2 40° 30° 0.4 20° 0.2 10° 0.1 0 0 0 0.2 0.4 0.6 0.8 1 Normalised incident power 0 10 20 30 40 50 60 70 80 90 Angle from sensor to illumination Spectral Response 100 Relative Responsivity (%) 80 60 40 20 0 0 200 400 600 Wavelength (nm) 800 1000 1200 Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/98