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SMP550G-EL

SMP550G-EL

  • 厂商:

    SEME-LAB

  • 封装:

  • 描述:

    SMP550G-EL - P.I.N. PHOTODIODE - Seme LAB

  • 详情介绍
  • 数据手册
  • 价格&库存
SMP550G-EL 数据手册
SMP550G-EL MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES • • • • • • • • • EYE RESPONSE DETECTION EXCELLENT LINEARITY LOW NOISE WIDE SPECTRAL RESPONSE LOW LEAKAGE CURRENT LOW CAPACITANCE BG18 INTEGRAL OPTICAL FILTER TO39 HERMETIC METAL CAN PACKAGE EMI SCREENING MESH AVAILABLE WINDOW Ø 5.9 ± 0.1 Ø 9.1 ± 0.2 Ø 8.1 ± 0.1 SENSITIVE SURFACE Ø 0. 4 5 L E AD 5 . 0 8 ± 0 .2 20 3.8 ± 0.2 DESCRIPTION 2 1 The SMP550G-EL is a Silicon P.I.N. photodiode incorporated in a hermetic metal can package. The electrical terminations are via two leads of diameter 0.018" on a pitch centre diameter of 0.2". The can structure incorporates an photoptic response optical filter with peak transmission at 510nm. The cathode of the photodiode is electrically connected to the package. The larger photodiode active area provides greater sensitivity than the SMP400 range of devices, with a corresponding reduction in speed. The photodiode structure has been optimised for high sensitivity, light measurement applications. The metal can and optional screening mesh ensure a rugged device with a high degree of immunity to radiated electrical interference. TO-39 Package Pin 1 – Anode Pin 2 – Cathode & Case. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Operating temperature range Storage temperature range Temperature coefficient of responsively Temperature coefficient of dark current Reverse breakdown voltage Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. -40°C to +70°C -45°C to +80°C 0.35% per °C x2 per 8°C rise 60V Prelim. 1/98 SMP550G-EL CHARACTERISTICS (Tamb=25°C unless otherwise stated) Characteristic Test Conditions. Responsively Active Area Dark Current Breakdown Voltage Capacitance E = 0 Dark E = 0 Dark E = 0 Dark E = 0 Dark E = 0 Dark 30V Reverse 50Ω 900nm Directional characteristics Min. 0.45 Typ. 0.55 5.19 Max. Units A/W mm2 λ at 900nm 1V Reverse 10V Reverse 10µA Reverse 0V Reverse 20V Reverse 60 2 16 80 55 10 9 19x10-14 4 22 nA V pF Rise Time NEP ns 0.45 W/√Hz Directional Characteristics 1 80° 70° Angle from sensor to illumination 1 0.9 0.8 Normalised Incident Power 60° 0.8 50° 0.6 0.7 0.6 0.5 0.4 0.3 0.2 40° 30° 0.4 20° 0.2 10° 0.1 0 0 0 0.2 0.4 0.6 0.8 1 Normalised incident power 0 10 20 30 40 50 60 70 80 90 Angle from sensor to illumination Spectral Response 100 Relative Responsivity (%) 80 60 40 20 0 0 200 400 600 Wavelength (nm) 800 1000 1200 Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/98
SMP550G-EL
1. 物料型号:SMP550G-EL 2. 器件简介: - SMP550G-EL是一个硅P.I.N.光电二极管,封装在密封的金属罐中。 - 该器件通过直径为0.018英寸的两个引脚进行电气连接,引脚间距中心直径为0.2英寸。 - 罐体结构内含一个光敏响应的光学滤波器,其峰值透射波长为510纳米。 - 光电二极管的阴极与封装体电气连接。 3. 引脚分配: - 引脚1:阳极 - 引脚2:阴极和外壳 4. 参数特性: - 工作温度范围:-40°C至+70°C - 存储温度范围:-45°C至+80°C - 响应温度系数:每摄氏度0.35% - 暗电流温度系数:每8°C上升2倍 - 反向击穿电压:60V 5. 功能详解: - 该光电二极管结构优化用于高灵敏度的光测量应用。 - 金属罐和可选的屏蔽网确保了器件的坚固性,并对辐射电磁干扰具有很高的免疫力。 6. 应用信息: - 适用于需要高灵敏度光测量的应用场合。 7. 封装信息: - 采用TO-39金属密封罐封装,可选EMI屏蔽网。
SMP550G-EL 价格&库存

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