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SMP550G-FJ

SMP550G-FJ

  • 厂商:

    SEME-LAB

  • 封装:

  • 描述:

    SMP550G-FJ - P.I.N. PHOTODIODE - Seme LAB

  • 详情介绍
  • 数据手册
  • 价格&库存
SMP550G-FJ 数据手册
SMP550G-FJ MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES • • • • • • • • • PHOTODIODE ISOLATED FROM PACKAGE EXCELLENT LINEARITY LOW NOISE WIDE SPECTRAL RESPONSE LOW LEAKAGE CURRENT LOW CAPACITANCE INTEGRAL OPTICAL FILTER OPTION note 1 TO39 HERMETIC METAL CAN PACKAGE EMI SCREENING MESH AVAILABLE WINDOW Ø 5 .9 ± 0 . 1 Ø 9 . 1 ± 0. 2 Ø 8 . 1 ± 0. 1 SENSITIVE SURFACE Ø 0. 45 LEAD 5.08 ± 0.2 20 3 .8 ± 0 .2 Note 1 Contact Semelab Plc for filter options 3 2 1 DESCRIPTION The SMP550G-FJ is a Silicon P.I.N. photodiode incorporated in a hermetic metal can package. The electrical terminations are via two leads of diameter 0.018" on a pitch centre diameter of 0.2". The can structure permits a wide range of optical filter options. The photodiode is electrically isolated from the package, which has a separate earth lead. The larger photodiode active area provides greater sensitivity than the SMP400 range of devices, with a corresponding reduction in speed. The photodiode structure has been optimised for high sensitivity, light measurement applications. The metal can, isolated photodiode and optional screening mesh ensure a rugged device with a high degree of immunity to conducted and radiated electrical interference. TO-39 Package Pin 1 – Anode Pin 2 – Cathode Pin 3 – Case ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Operating temperature range Storage temperature range Temperature coefficient of responsively Temperature coefficient of dark current Reverse breakdown voltage Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. -40°C to +70°C -45°C to +80°C 0.35% per °C x2 per 8°C rise 60V Prelim. 1/98 SMP550G-FJ CHARACTERISTICS (Tamb=25°C unless otherwise stated) Characteristic Test Conditions. Responsively Active Area Dark Current Breakdown Voltage Capacitance E = 0 Dark E = 0 Dark E = 0 Dark E = 0 Dark E = 0 Dark 30V Reverse 50Ω 900nm Directional characteristics Min. 0.45 Typ. 0.55 5.19 Max. Units A/W mm2 λ at 900nm 1V Reverse 10V Reverse 10µA Reverse 0V Reverse 20V Reverse 60 2 16 80 55 10 9 19x10-14 4 22 nA V pF Rise Time NEP ns 0.45 W/√Hz Directional Characteristics 1 80° 70° Angle from sensor to illumination 1 0.9 0.8 Normalised Incident Power 60° 0.8 50° 0.6 0.7 0.6 0.5 0.4 0.3 0.2 40° 30° 0.4 20° 0.2 10° 0.1 0 0 0 0.2 0.4 0.6 0.8 1 Normalised incident power 0 10 20 30 40 50 60 70 80 90 Angle from sensor to illumination Spectral Response 100 Relative Responsivity (%) 80 60 40 20 0 0 200 400 600 Wavelength (nm) 800 1000 1200 Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/98
SMP550G-FJ
1. 物料型号:SMP550G-FJ

2. 器件简介: - SMP550G-FJ是一款硅质P.I.N.光电二极管,封装在密封的金属罐中。 - 该器件通过直径为0.018英寸的两个引脚实现电气连接,引脚中心间距为0.2英寸。 - 金属罐结构允许多种光学滤光片选项。 - 光电二极管在电气上与封装隔离,具有独立的接地引脚。

3. 引脚分配: - 引脚1:阳极 - 引脚2:阴极 - 引脚3:外壳

4. 参数特性: - 响应度:在900nm波长下的响应度为0.45至0.55A/W。 - 暗电流:在1V反向电压下为2至4nA,在10V反向电压下为16至22nA。 - 击穿电压:在10A反向条件下为60至80V。 - 电容:在0V反向电压下为55pF,在20V反向电压下为10pF。 - 上升时间:在30V反向电压下为9ns。 - 噪声等效功率(NEP):在900nm波长下为19x10^-14 W/Hz。

5. 功能详解: - 该光电二极管具有较大的光敏区域,提高了灵敏度,但相应速度会降低。 - 金属罐、隔离的光电二极管和可选的屏蔽网确保了设备的坚固性,并对传导和辐射电磁干扰具有很高的免疫力。

6. 应用信息: - 适用于需要高灵敏度光测量的应用场合。

7. 封装信息: - 封装类型为TO-39,这是一种密封的金属罐封装,具有EMI屏蔽网选项。
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