SMP600G-EJ

SMP600G-EJ

  • 厂商:

    SEME-LAB

  • 封装:

  • 描述:

    SMP600G-EJ - P.I.N. PHOTODIODE - Seme LAB

  • 详情介绍
  • 数据手册
  • 价格&库存
SMP600G-EJ 数据手册
SMP600G-EJ MECHANICAL DATA Dimensions in mm. P.I.N. PHOTODIODE FEATURES • • • • • • • HIGH SENSITIVITY EXCELLENT LINEARITY LOW NOISE WIDE SPECTRAL RESPONSE INTEGRAL OPTICAL FILTER OPTION note 1 .TO39 HERMETIC METAL CAN PACKAGE EMI SCREENING MESH AVAILABLE WINDOW Ø 5.9 ± 0.1 Ø 9.1 ± 0.2 Ø 8.1 ± 0.1 SENSITIVE SURFACE Ø 0. 4 5 L E AD 5 . 0 8 ± 0 .2 20 3.8 ± 0.2 Note 1 Contact Semelab Plc for filter options DESCRIPTION 2 1 The SMP600G-EJ is a Silicon P.I.N. photodiode incorporated in a hermetic metal can package. The electrical terminations are via two leads of diameter 0.018" on a pitch of 0.2". The can structure permits a wide range of optical filter options. The cathode of the photodiode is electrically connected to the package. The large photodiode active area provides greater sensitivity than the SMP550 range of devices, with a slight reduction in speed. Inherent in the device geometry is a reduction in the receiving angle. The photodiode structure has been optimised for high sensitivity, light measurement applications. The metal can and optional screening mesh ensure a rugged device with a high degree of immunity to radiated electrical interference. TO-39 Package Pin 1 – Anode Pin 2 – Cathode & Case ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Operating temperature range Storage temperature range Temperature coefficient of responsively Temperature coefficient of dark current Reverse breakdown voltage Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. -40°C to +70°C -45°C to +80°C 0.35% per °C x2 per 8°C rise 60V Prelim. 1/98 SMP600G-EJ CHARACTERISTICS (Tamb=25°C unless otherwise stated) Characteristic Test Conditions. Responsively Active Area Dark Current Breakdown Voltage Capacitance E = 0 Dark E = 0 Dark E = 0 Dark E = 0 Dark E = 0 Dark 30V Reverse 50Ω 900nm Directional characteristics Min. 0.45 Typ. 0.55 15 Max. Units A/W mm2 λ at 900nm 1V Reverse 10V Reverse 10µA Reverse 0V Reverse 20V Reverse 60 2 6 nA V pF 80 90 25 12 20x10-14 Rise Time NEP ns W/√Hz Directional Characteristics 1 80° 70° Angle from sensor to illumination 1 0.9 0.8 Normalised Incident Power 60° 0.8 50° 0.6 0.7 0.6 0.5 0.4 0.3 0.2 40° 30° 0.4 20° 0.2 10° 0.1 0 0 0 0.2 0.4 0.6 0.8 1 Normalised incident power 0 10 20 30 40 50 60 70 80 90 Angle from sensor to illumination Spectral Response 100 Relative Responsivity (%) 80 60 40 20 0 0 200 400 600 Wavelength (nm) 800 1000 1200 Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/98
SMP600G-EJ
1. 物料型号: - 型号为SMP600G-EJ,这是一个硅P.I.N.光电二极管,封装在密封金属罐中。

2. 器件简介: - SMP600G-EJ是一个硅P.I.N.光电二极管,具有高灵敏度、优异的线性、低噪声和宽光谱响应。它还提供了集成光学滤波器的选项,并有TO39密封金属罐封装,可选EMI屏蔽网。

3. 引脚分配: - Pin 1 – 阳极(Anode) - Pin 2 – 阴极和外壳(Cathode & Case)

4. 参数特性: - 工作温度范围:-40°C至+70°C - 存储温度范围:-45°C至+80°C - 响应温度系数:每°C变化0.35% - 暗电流温度系数:每8°C上升x2 - 反向击穿电压:60V

5. 功能详解: - 该光电二极管的大光敏面积提供了比SMP550系列更高的灵敏度,但速度略有降低。设备几何形状固有地减小了接收角度。该光电二极管结构针对高灵敏度、光测量应用进行了优化。金属罐和可选屏蔽网确保了设备的坚固性,并具有很高的辐射电磁干扰免疫力。

6. 应用信息: - 适用于需要高灵敏度光测量的应用场合。

7. 封装信息: - TO-39封装,具有较大的光敏面积,提供宽范围的光学滤波器选项。
SMP600G-EJ 价格&库存

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