VN10KE

N-CHANNEL ENHANCEMENT MODE MOSFET VN10KE • • • Low RDS(on), VGS(th), CISS And Fast Switching Speeds Hermetic TO-52 Metal package. Ideally Suited For Power Supply Circuits, Switching And Driver (Relay, Solenoid, Lamp etc..) Applications Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VDS VGS ID IDM PD TJ Tstg Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Pulsed Drain Current (1) Total Power Dissipation at Operating Temperature Range Storage Temperature Range TA = 25°C TA = 100°C TA = 25°C Derate Above 25°C 60V +15V, -0.3V 0.17A 0.11A 1.0A 312.5mW 2.5mW/°C -55 to +150°C -55 to +150°C THERMAL PROPERTIES Symbols RθJA Parameters Thermal Resistance, Junction To Ambient Min. Typ. Max. 400 Units °C/W Notes Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8418 Issue 1 Page 1 of 3 Website: http://www.semelab-tt.com N-CHANNEL ENHANCEMENT MODE MOSFET VN10KE ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols BVDSS VGS(th) IGSS IDSS ID(ON)(2) (2) Parameters Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Static Drain-Source On-State Resistance Forward Transconductance Common Source Output Conductance Test Conditions VGS = 0 VDS = VGS VGS = 15V VDS = 48V ID = 100µA ID = 1.0mA VDS = 0V VGS = 0 TJ = 125°C VDS = 10V VGS = 5V VGS = 10V ID = 0.2A ID = 0.5A TJ = 125°C Min. 60 0.8 Typ. Max. Units V 2.5 100 10 500 V nA µA A 0.75 7.5 5 9 100 RDS(on) (2) VGS = 10V Ω gfs VDS = 10V VDS = 7.5V ID = 0.5A ID = 50mA gos (2) m 0.2 DYNAMIC CHARACTERISTICS Ciss Coss Crss td(on) td(off) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time VGS = 0 VDS = 25V f = 1.0MHz VDD = 15V, RL= 23Ω, RG = 50Ω ID = 1.0A, VGEN = 10V 60 25 5 10 ns 10 pF Notes Notes (2) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8418 Issue 1 Page 2 of 3 N-CHANNEL ENHANCEMENT MODE MOSFET VN10KE MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) ) ) 0 0 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 2 1 TO-52 PACKAGE (TO-206AC) Underside View Pin 1 - Source Pin 2 - Gate Pin 3 - Case & Drain S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com 12.7 (0.500) 3.81 (0.150) min. 2.93 (0.115) 1 7 2 1 . . 0 0 ( ( 3 2 3 3 . . 5 4 ) 0 0 5 . . n 0 i ( m 7 . 2 1 Website: http://www.semelab-tt.com Document Number 8418 Issue 1 Page 3 of 3