VP1008CSM4

P-CHANNEL ENHANCEMENT MODE MOSFET VP1008CSM4 • • • • • • Low On-Resistance, RDS(on) Moderate Threshold, VGS(th) Low Input Capacitance, CISS Fast Switching Speed Hermetic Ceramic Surface Mount Package Ideally Suited For Power Supply Circuits, Switching And Driver (Relay, Solenoid, Lamp etc.) Applications Screening Options Available • ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VDS VGS ID IDM PD TJ Tstg Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Pulsed Drain Current (1) Total Power Dissipation at Operating Temperature Range Storage Temperature Range TA = 25°C TA = 100°C TA = 25°C Derate Above 25°C 100V ±30V 300mA 195mA 3A 400mW 3.2mW/°C -55 to +150°C -55 to +150°C THERMAL PROPERTIES Symbols RθJA Parameters Thermal Resistance, Junction To Ambient Min. Typ. Max. 312.5 Units °C/W Notes Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 8447 Issue 2 Page 1 of 3 Website: http://www.semelab-tt.com P-CHANNEL ENHANCEMENT MODE MOSFET VP1008CSM4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols BVDSS VGS(th) IGSS Parameters Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Test Conditions VGS = 0 VDS = VGS VGS = ±20V ID = -10µA ID = -1.0mA VDS = 0V TJ = 125°C VDS = -100V VGS = 0 TJ = 125°C VDS = -15V VGS = -10V VGS = -10V ID = -1.0A TJ = 125°C VDS = -10V VDS = -7.5V ID = -0.5A ID = -0.1A Min. -100 -2 Typ. -110 -3.4 Max. Units V -4.5 ±100 ±500 -10 -500 V nA IDSS ID(ON)(2) RDS(on) gfs (2) (2) µA A -1.1 -2 2.5 4.3 5 8 Static Drain-Source On-State Resistance Forward Transconductance Common Source Output Conductance Ω 200 325 mƱ 0.45 gos (2) DYNAMIC CHARACTERISTICS Ciss Coss Crss td(on) tr td(off) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time VDD = -25V, RL= 47Ω, RG = 50Ω ID = -0.5A, VGEN = -10V Turn-Off Time VGS = 0 VDS = -25V f = 1.0MHz 75 40 18 7 52 40 56 150 60 25 15 60 50 65 ns pF Notes Notes (2) Pulse Width ≤ 300us, δ ≤ 2% S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8447 Issue 2 Page 2 of 3 P-CHANNEL ENHANCEMENT MODE MOSFET VP1008CSM4 MECHANICAL DATA Dimensions in mm (inches) 5.59 ± 0.13 (0.22 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001) 1.40 ± 0.15 (0.055 ± 0.006) 0.64 ± 0.08 (0.025 ± 0.003) 0.23 rad. (0.009) 3 2 1.27 ± 0.05 (0.05 ± 0.002) 3.81 ± 0.13 (0.15 ± 0.005) 4 1 0.23 min. (0.009) 1.02 ± 0.20 (0.04 ± 0.008) 2.03 ± 0.20 (0.08 ± 0.008) LCC3 PACKAGE (MO-041BA) Underside View P AD PAD 1 – Drain PAD 2 – N/C PAD 3 – Source PAD 4 – Gate S emelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Semelab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8447 Issue 2 Page 3 of 3