Data Sheet No. 2C4261
Chip Type 2C4261 Geometry 0014 Polarity PNP
Generic Packaged Parts: 2N4260, 2N4261
Chip type 2C4261 by Semicoa Semiconductors provides performance similar to these devices.
Part Numbers:
Product Summary: APPLICATIONS: Designed for low voltage, low gain RF amplifier applications. Features:
Special Characteristics
2N4261, 2N4261UB, 2N4260, 2N4260UB, SD4261, SD4261F, SQ4261, SQ4261F
ft = 1.8 GHz (typ) at 10 mA/10V
Mechanical Specifications
Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 12 kÅ min. Au - 6.5 kÅ nom. 2.1 mils x 2.1 mils 2.1 mils x 2.1 mils 8 mils nominal 16 mils x 16 mils Silox Passivated
Electrical Characteristics
TA = 25oC
Parameter
BVCEO BVCBO BVEBO
Test conditions
IC = 10.0 mA, IB = 0 IC = 10 µA, IE = 0 IE = 10 µA, IC= 0
Min
15 15 4.5
Max
-------
Unit
V dc V dc V dc
hFE IC = 10 mA dc, VCE = 1.0 V dc 30 150 --Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less than 300 µs, duty cycle less than 2%.