2N1893_02

2N1893 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N1893J) • JANTX level (2N1893JX) • JANTXV level (2N1893JV) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing (total dose) upon request Applications • General purpose • Low power • NPN silicon transistor Features • • • • Hermetically sealed TO-5 metal can Also available in chip configuration Chip geometry 4500 Reference document: MIL-PRF-19500/182 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25 C Derate above 60OC Power Dissipation, TC = 25OC Derate above 25OC Operating Junction Temperature Storage Temperature Thermal Resistance O • Qualification Levels: JAN, JANTX, and JANTXV • Radiation testing available TC = 25°C unless otherwise specified Symbol VCEO VCBO VEBO IC PT PT TJ TSTG Rating 80 120 7 500 0.8 5.7 3.0 17.2 -65 to +200 175 Unit Volts Volts Volts mA W mW/°C W mW/°C °C °C/W RθJA Copyright 2002 Rev. F Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N1893 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 VBEsat VCEsat Symbol V(BR)CEO V(BR)CER ICBO1 ICBO2 ICBO3 IEBO1 IEBO2 Test Conditions IC = 30 mA IC = 10 mA, RBE = 10 Ω VCB = 120 Volts VCB = 90 Volts VCE = 90 Volts, TA = 150 OC VEB = 7 Volts VEB = 5 Volts Min 80 100 100 10 15 100 10 Typ Max Units Volts Volts µA nA µA µA nA Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Short Circuit Forward Current Transfer Ratio Short Circuit Input Impedance Open Circuit Output Admittance Open Circuit reverse Voltage Transfer Ratio Open Circuit Output Capacitance Switching Characteristics Pulse Response Test Conditions IC = 1 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts, TA = -55 OC IC = 150 mA, IB = 15 mA IC = 150 mA, IB = 15 mA Min 20 35 40 20 Typ Max Units 120 1.3 5.0 Volts Volts Symbol |hFE| hFE1 hFE2 hie hoe hre COBO Test Conditions VCE = 10 Volts, IC = 50 mA, f = 20 MHz f = 1 kHz VCE = 5 Volts, IC = 1 mA VCE = 10 Volts, IC = 5 mA VCB = 10V, IC = 5mA VCB = 10V, IC = 5mA VCB = 10V, IC = 5mA VCB = 10 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz Min 3 35 45 4 Typ Max 10 100 150 8 0.5 1.5x10-4 Units Ω µΩ 2 15 pF ton + toff 30 ns Copyright 2002 Rev. F Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com