2N2484_02

2N2484 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N2484J) • JANTX level (2N2484JX) • JANTXV level (2N2484JV) • JANS level (2N2484JS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Applications • General purpose • Low power • NPN silicon transistor Features • • • • Hermetically sealed TO-18 metal can Also available in chip configuration Chip geometry 0307 Reference document: MIL-PRF-19500/376 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available TC = 25°C unless otherwise specified Rating 60 60 6 50 360 2.06 325 -65 to +200 -65 to +200 Unit Volts Volts Volts mA mW mW/°C °C/W °C °C RθJA TJ TSTG Copyright 2002 Rev. F Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N2484 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol V(BR)CEO ICBO1 ICBO2 ICBO3 ICEO ICES IEBO1 IEBO2 Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 hFE7 VBE VCEsat1 Symbol |hFE|1 |hFE|2 hFE COBO CIBO Test Conditions IC = 10 mA VCB = 60 Volts VCB = 45 Volts VCB = 45 Volts, TA = 150°C VCE = 5 Volts VCE = 45 Volts VEB = 6 Volts VEB = 5 Volts Test Conditions IC = 1 µA, VCE = 5 Volts IC = 10 µA, VCE = 5 Volts IC = 100 µA, VCE = 5 Volts IC = 500 µA, VCE = 5 Volts IC = 1 mA, VCE = 5 Volts IC = 10 mA, VCE = 5 Volts IC = 10 µA, VCE = 5 Volts TA = -55°C VCE = 5 Volts, 100 µA IC = 1 mA, IB = 100 µA Test Conditions VCE = 5 Volts, IC = 50 µA, f = 5 MHz VCE = 5 Volts, IC = 500 µA, f = 30 MHz VCE = 5 Volts, IC = 1 mA, f = 1 kHz VCB = 5 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz VCE = 5 Volts, IC = 10 µA, Rg = 10 kΩ f = 100 Hz f = 1 kHz f = 10 kHz VCE = 5 Volts, IC = 10 µA, Rg = 10 kΩ, 10Hz < Noise BW