2N2904A

2N2904A Silicon PNP Transistor Data Sheet Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N2904AJ) • JANTX level (2N2904AJX) • JANTXV level (2N2904AJV) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing (total dose) upon request Applications • General purpose • Low power • PNP silicon transistor Features • • • • Hermetically sealed TO-39 metal can Also available in chip configuration Chip geometry 0600 Reference document: MIL-PRF-19500/290 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 • Qualification Levels: JAN, JANTX, and JANTXV • Radiation testing available TC = 25°C unless otherwise specified Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25 °C Derate above 60 °C Power Dissipation, TC = 25 °C Derate above 25 °C Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT Rating 60 60 5 600 0.8 5.7 3.0 17.2 175 -65 to +200 -65 to +200 Unit Volts Volts Volts mA W mW/°C W mW/°C °C/W °C °C RθJA TJ TSTG Copyright 2002 Rev. H Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 1 www.SEMICOA.com 2N2904A Silicon PNP Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Base Cutoff Current Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 VBEsat1 VBEsat2 VCEsat1 VCEsat2 Symbol |hFE| hFE COBO CIBO ton toff Test Conditions IC = 0.1 mA, VCE = 10 Volts IC = 1.0 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts IC = 500 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts TA = -55OC IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Test Conditions VCE = 20 Volts, IC = 50 mA, f = 100 MHz VCE = 10 Volts, IC = 1 mA, f = 1 kHz VCB = 10 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz VEB = 2.0 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz Symbol V(BR)CEO ICBO1 ICBO2 ICBO3 ICES IEBO1 IEBO2 Test Conditions IC = 10 mA VCB = 60 Volts VCB = 50 Volts VCB = 50 Volts, TA = 150OC VCE = 60 Volts VEB = 5 Volts VEB = 3.5 Volts Min 60 10 10 10 1 10 50 Typ Max Units Volts µA nA µA µA µA nA Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% DC Current Gain Min 40 40 40 40 40 20 Typ Max 175 120 Units Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance Switching Characteristics Saturated Turn-On Time Saturated Turn-Off Time 1.3 2.6 0.4 1.6 Volts Volts Min 2.0 40 Typ Max Units 8 30 pF pF 45 300 ns ns Copyright 2002 Rev. H Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com