2N2919

2N2919 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N2919J) • JANTX level (2N2919JX) • JANTXV level (2N2919JV) • JANS level (2N2919JS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Applications • General purpose • Matched Dual transistors • NPN silicon transistor Features • • • • Hermetically sealed TO-78 metal can Also available in chip configuration Chip geometry 0307 Reference document: MIL-PRF-19500/355 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Power Dissipation, TC = 25°C Derate linearly above 25°C Operating Junction Temperature Storage Temperature Copyright 2002 Rev. H • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available TC = 25°C unless otherwise specified Symbol VCEO VCBO VEBO IC PT Rating 60 70 5 50 300 one section 600 both sections 1.71one section 3.43 both sections 750 one section 1.5 both sections 4.286 one section 7.14 both sections -65 to +200 Unit Volts Volts Volts mA mW mW/°C MW W mW/°C °C PT TJ TSTG Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N2919 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE2-1/hFE2-2 |VBE1-VBE2|1 |VBE1-VBE2|2 |VBE1-VBE2|3 |VBE1-VBE2|1 |VBE1-VBE2|2 VBEsat1 VCEsat1 Test Conditions IC = 10 µA, VCE = 5 Volts IC = 100 µA, VCE = 5 Volts IC = 1 mA, VCE = 5 Volts IC = 10 µA, VCE = 5 Volts TA = -55°C IC = 100 µA, VCE = 5 Volts VCE = 5 Volts, IC = 10 µA VCE = 5 Volts, IC = 100 µA VCE = 5 Volts, IC = 1 mA VCE = 5 Volts, IC = 100 µA TA = 25 °C and -55°C TA = 25 °C and +125°C IC = 1 mA, IB = 100 µA IC = 1 mA, IB = 100 µA Symbol V(BR)CEO ICBO1 ICBO2 ICBO3 ICEO IEBO1 IEBO2 Test Conditions IC = 10 mA VCB = 70 Volts VCB = 45 Volts VCB = 45 Volts, TA = 150°C VCE = 5 Volts VEB = 6 Volts VEB = 5 Volts Min 60 10 2 2.5 2 10 2 Min 60 100 150 20 0.9 Typ Max 240 325 600 1.0 5 3 5 0.8 1 1.0 0.3 Typ Max Units Volts µA nA µA nA µA nA Units Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% DC Current Gain Base-Emitter Voltage differential Base-Emitter Voltage differential at temperature Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics mVolts mVolts Volts Volts 0.5 Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Symbol |hFE1| hFE COBO Noise Figure Short Circuit Input Impedance Open Circuit Output Admittance Open Circuit reverse Voltage Transfer Ratio Copyright 2002 Rev. H NF1 N F2 N F3 hie hoe hre Test Conditions VCE = 5 Volts, IC = 500 µA, f = 20 MHz VCE = 10 Volts, IC = 1 mA, f = 1 kHz VCB = 5 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VCE = 5 Volts, IC = 10 µA, Rg = 10 kΩ f = 100 Hz f = 1 kHz f = 10 kHz VCB =5V, IC =1mA, f =1kHz VCB =5V, IC =1mA, f =1kHz VCB =5V, IC=100µA, f=1kHz Min 3 150 Typ Max 20 600 5 Units pF 3 5 3 3 30 60 1x10-3 dB kΩ µmhos Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com