2N3019_02

2N3019 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N3019J) • JANTX level (2N3019JX) • JANTXV level (2N3019JV) • JANS level (2N3019JS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Applications • General purpose • Low power • NPN silicon transistor Features • • • • Hermetically sealed TO-5 metal can Also available in chip configuration Chip geometry 4500 Reference document: MIL-PRF-19500/391 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25OC Derate linearly above 60OC Power Dissipation, TC = 25OC Derate linearly above 25OC Thermal Resistance Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT PT • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available TC = 25°C unless otherwise specified Rating 80 140 7 1 0.8 5.7 5.0 28.6 175 -65 to +200 Unit Volts Volts Volts A W mW/°C W mW/°C °C/W °C RθJA TJ TSTG Copyright 2002 Rev. F Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N3019 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 VBEsat VCEsat1 VCEsat2 Test Conditions IC = 150 mA, VCE = 10 Volts IC = 0.1 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 500 mA, VCE = 10 Volts IC = 1 A, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts TA = -55°C IC = 150 mA, IB = 15 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Symbol V(BR)CEO ICBO1 ICES1 ICES2 IEBO1 IEBO2 Test Conditions IC = 30 mA VCB = 140 Volts VCE = 90 Volts VCE = 90 Volts, TA = 150°C VEB = 7 Volts VEB = 5 Volts Min 80 10 10 10 10 10 Typ Max Units Volts µA nA µA µA nA Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% DC Current Gain Min 100 50 90 50 15 40 Typ Max 300 200 200 Units Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Small Signal Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance Collector Base time constant Noise Figure Switching Characteristics Saturated Turn-On Time 1.1 0.2 0.5 Volts Volts Symbol |hFE| hFE COBO CIBO rb’CC NF Test Conditions VCE = 10 Volts, IC = 50 mA, f = 20 MHz VCE = 5 Volts, IC = 1 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz VCB = 10 Volts, IE = 10 mA, f = 79.8 MHz VCE = 10 Volts, IC = 100 µA, f = 200 Hz, Rg = 1 kΩ Min 5 80 Typ Max 20 400 12 60 400 4 Units pF pF ps dB tON +tOFF 30 ns Copyright 2002 Rev. F Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com