2N3500

2N3500 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N3500J) • JANTX level (2N3500JX) • JANTXV level (2N3500JV) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Applications • General purpose • Low power • NPN silicon transistor Features • • • • Hermetically sealed TO-39 metal can Also available in chip configuration Chip geometry 5620 Reference document: MIL-PRF-19500/366 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 • Qualification Levels: JAN, JANTX, and JANTXV • Radiation testing available TC = 25°C unless otherwise specified Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25 C Derate linearly above 25OC Thermal Resistance Operating Junction Temperature Storage Temperature O Symbol VCEO VCBO VEBO IC PT Rating 150 150 6 300 1 5.71 175 -65 to +200 -65 to +200 Unit Volts Volts Volts mA W mW/°C °C/W °C °C RθJA TJ TSTG Copyright© 2004 Rev. H.2 Semicoa 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N3500 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Symbol V(BR)CEO ICBO1 ICBO2 ICBO3 ICEO IEBO1 IEBO2 Test Conditions IC = 10 mA VCB = 150 Volts VCB = 75 Volts VCB = 75 Volts, TA = 150°C VCE = 120 Volts VEB = 6 Volts VEB = 4 Volts Min 150 10 50 50 1 10 25 Typ Max Units Volts µA nA µA µA µA nA On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE7 VBEsat1 VBEsat2 VCEsat1 VCEsat2 Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Test Conditions IC = 0.1 mA, VCE = 10 Volts IC = 1.0 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts IC = 300 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts TA = -55°C IC = 10 mA, IB = 1 mA IC = 150 mA, IB = 15 mA IC = 10 mA, IB = 1 mA IC = 150 mA, IB = 15 mA Min 20 25 35 40 15 22 Typ Max Units 120 0.8 1.2 0.2 0.4 Volts Volts Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance Symbol |hFE| hFE COBO CIBO NF1 Noise Figure NF2 Test Conditions VCE = 20 Volts, IC = 20 mA, f = 100 MHz VCE = 10 Volts, IC = 10 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz VCE = 10 Volts, IC = 0.5 mA, f = 1 kHz, Rg = 1 kΩ VCE = 10 Volts, IC = 0.5 mA, f = 10 kHz, Rg = 1 kΩ VEB = 5 Volts, IC = 150 mA, IB1 = 15 mA IC = 150 mA, IB1=IB2=15 mA Min 1.5 35 Typ Max 8 300 8 80 16 dB 6 pF pF Units Switching Characteristics Saturated Turn-On Time Saturated Turn-Off Time tON tOFF 115 1,150 ns ns Copyright© 2004 Rev. H.2 Semicoa 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com