2N3506

2N3506 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N3506J) • JANTX level (2N3506JX) • JANTXV level (2N3506JV) • JANS level (2N3506JS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Applications • General purpose switching transistor • Low power • NPN silicon transistor Features • • • • Hermetically sealed TO-39 metal can Also available in chip configuration Chip geometry 1506 Reference document: MIL-PRF-19500/349 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available TC = 25°C unless otherwise specified Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25 C Derate linearly above 25OC Power Dissipation, TC = 25OC Derate linearly above 25OC Thermal Resistance Operating Junction Temperature Storage Temperature O Symbol VCEO VCBO VEBO IC PT PT Rating 40 60 5 3 1 5.71 5 28.6 175 -65 to +200 -65 to +200 Unit Volts Volts Volts A W mW/°C W mW/°C °C/W °C °C RθJA TJ TSTG Copyright 2002 Rev. E Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2 www.SEMICOA.com 2N3506 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 VBEsat1 VBEsat2 VBEsat3 VCEsat1 VCEsat2 VCEsat3 Symbol |hFE| COBO CIBO td tr ts tf Test Conditions IC = 500 mA, VCE = 1 Volts IC = 1.5 A, VCE = 2 Volts IC = 2.5 A, VCE = 3 Volts IC = 3.0 A, VCE = 5 Volts IC = 500 mA, VCE = 1 Volts TA = -55°C IC = 500 mA, IB = 50 mA IC = 1.5 A, IB = 150 mA IC = 2.5 A, IB = 250 mA IC = 500 mA, IB = 50 mA IC = 1.5 A, IB = 150 mA IC = 2.5 A, IB = 250 mA Test Conditions VCE = 5 Volts, IC = 100 mA, f = 20 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 3 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz IC = 1.5 A, IB1 = 150 mA IC = 1.5 A, IB1 = 150 mA IC = 1.5 A, IB1=IB2 = 150 mA IC = 1.5 A, IB1=IB2 = 150 mA Min 50 40 30 25 25 Typ Max 250 200 Units Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX1 ICEX2 Test Conditions IC = 100 µA IC = 10 mA IE = 10 µA VCE = 40 Volts, VEB = 4 Volts VCE = 40 Volts, VEB = 4 Volts, TA = 150°C Min 60 40 5 1 1.5 Typ Max Units Volts Volts Volts µA mA DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance Delay Time Rise Time Switching Characteristics Storage Time Fall Time 0.8 0.5 1.0 1.5 1.0 1.3 2.0 Volts Volts Min 3 Typ Max 15 40 300 15 30 Units pF pF ns ns 55 35 ns ns Copyright 2002 Rev. E Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com